FCX1047A ZETEX | Alldatasheet

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Technical content

(SWITCHING) TRANSISTOR ISSSUE 2 - DECEMBER 1998

FEATURES

  • 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent H FE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 40mΩ at 4A Complimentary Type - FCX1147A Partmarking Detail - 047 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 35 V Collector-Emitter Voltage V CEO 10 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 20 A Continuous Collector Current I C 4A Power Dissipation at Tamb=25°C P tot 1 † 2 ‡ W W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. C B C E FCX1047A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 35 V IC=100µA Collector-Emitter Breakdown Voltage VCES 35 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 10 V I C=10mA Collector-Emitter Breakdown Voltage VCEV 35 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current I CBO 0.3 10 nA V CB=20V Emitter Cut-Off Current I EBO 0.3 10 nA V EB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA V CES=20V Collector-Emitter Saturation Voltage VCE(sat) 25 140 160 220 200 240 350 mV mV mV mV mV I C=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=4A, IB=50mA* IC=5A, IB=25mA* Base-Emitter Saturation Voltage VBE(sat) 920 1000 mV I C=4A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV I C=4A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 290 300 200 200 430 440 450 350 330 110 1200 I C=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* Transition Frequency f T 150 MHz I C=50mA, VCE=10V f=50MHz Output Capacitance C obo 85 pF V CB=10V, f=1MHz Switching Times ton 130 ns I C=4A, IB=40mA, VCC=10V toff 230 ns IC=4A, IB=±40mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1047A

IC - Collector Current (A) VCE(sat) v IC IC/IB=200 IC/IB=100 IC/IB=50 +100°C +25°C IC - Collector Current (A) hFE v IC +25°C +100°C -55°C IC - Collector Current (A) VBE(on) v IC +100°C +150°C 0.2 +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C 0.6 +25°C IC - Collector Current (A) VBE(sat) v IC 100ms 100 DC 0.1 VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100µs +150°C VCE=2V +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 10m 100m 1 11 0 100 0.4 0.6 400 200 600 800 100101100m10m1m 100101100m10m1m -55°C 0.2 0.4 0.8 100101100m10m1m 100101100m10m1m 0.6 0.4 0.2 0.8 0.6 0.4 0.2 FCX1047A TYPICAL CHARACTERISTICS