FCP9N60N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A
  • Ultra low gate charge ( Typ. Qg = 22nC)
  • Low effective output capacitance
  • 100% avalanche tested
  • RoHS compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By util izing this advanced te chnology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.D G S TO-220F FCPF Series G S D G D S TO-220 FCP Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCP9N60N FCPF9N60NT Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 9.0 9.0* A-Continuous (TC = 100oC) 5.7 5.7* IDM Drain Current - Pulsed (Note 1) 27 27* A EAS Single Pulsed Avalanche Energy (Note 2) 135 mJ IAR Avalanche Current 3 A EAR Repetitive Avalanche Energy 0.83 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (TC = 25oC) 83.3 29.8 W - Derate above 25oC0 . 6 7 0 . 2 4 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP9N60N FCPF9N60NT Units RθJC Thermal Resistance, Junction to Case 1.5 4.2 oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP9N60N FCP9N60N TO-220 - - 50 FCPF9N60NT FCPF9N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage I D = 1mA, VGS = 0V, TC = 25oC 600 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25oC - 0.72 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μAVDS = 480V, VGS = 0V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250μA2 . 0 - 4 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 4.5A - 0.33 0.385 Ω gFS Forward Transconductance V DS = 40V, ID = 4.5A - 7.5 - S Ciss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 930 1240 pF Coss Output Capacitance - 35 50 pF Crss Reverse Transfer Capacitance - 2 4 pF Coss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 20 - pF Cosseff. Effective Output Capacitance V DS = 0V to 480V, VGS = 0V - 106 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 4.5A, VGS = 10V (Note 4) - 22.0 29 nC Qgs Gate to Source Gate Charge - 4.1 - nC Qgd Gate to Drain “Miller” Charge - 7.1 - nC ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω td(on) Turn-On Delay Time VDD = 380V, ID = 4.5A RG = 4.7Ω (Note 4) - 12.7 35.4 ns tr Turn-On Rise Time - 8.7 27.4 ns td(off) Turn-Off Delay Time - 36.9 83.8 ns tf Turn-Off Fall Time - 10.2 30.4 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 9.0 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 27 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 4.5A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 4.5A dIF/dt = 100A/μs - 213 - ns Qrr Reverse Recovery Charge - 2.2 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G

  • I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G
  • I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com8 Dimensions in Millimeters Mechanical Dimensions TO-220

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com9 Mechanical Dimensions TO-220F Dimensions in Millimeters

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF TH E APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERM S OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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