FCPF7N60T FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 6 5 0 V @ TJ = 150oC
  • T y p . RDS(on) = 530 mΩ
  • Ultra Low Gate Charge (Typ. Q g = 23 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 60 pF)
  • 100% Avalanche Tested
  • R o H S C o m p l i a n t Application
  • LCD/LED/PDP TV
  • Solar Inverter
  • AC-DC Power Supply

Description

SuperFET® MOSFET is Fairchild Se miconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance tec hnology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Absolute Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCP7N60 FCPF7N60 / FCPF7N60YDTU Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (T C = 25°C) - Continuous (TC = 100°C) 4.4 4.4* A A IDM Drain Current - Pulsed (Note 1) 21 21* A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 7A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (T C = 25°C) - Derate Above 25°C 0.67 0.25 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCP7N60 FCPF7N60 / FCPF7N60YDTU Unit *Drain current limited by maximum junction temperature. G S D TO-220F Y-formed

FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted. Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP7N60 FCP7N60 TO220 Tube N/A N/A 50 units FCPF7N60 FCPF7N60 TO220F Tube N/A N/A 50 units FCPF7N60YDTU FCPF7N60 TO-220F (Y-formed) Tube N/A N/A 50 units Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C- - 0 . 6 - - V / °C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 7 A -- 700 -- V IDSS Zero Gate Voltage Drain Current V DS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C μA μA IGSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 μA3 . 0 - - 5 . 0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 0.53 0.6 Ω gFS Forward Transconductance V DS = 40 V, ID = 3.5 A -- 6 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1 MHz -- 710 920 pF Coss Output Capacitance -- 380 500 pF Crss Reverse Transfer Capacitance -- 34 -- pF Coss Output Capacitance V DS = 480 V, VGS = 0 V, f = 1 MHz -- 22 29 pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, VGS = 0 V -- 60 -- pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, ID = 7 A, VGS = 10 V, RG = 25 Ω (Note 4) -- 35 80 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 75 160 ns tf Turn-Off Fall Time -- 32 75 ns Qg Total Gate Charge V DS = 480 V, ID = 7 A, VGS = 10 V (Note 4) -- 23 30 nC Qgs Gate-Source Charge -- 4.2 5.5 nC Qgd Gate-Drain Charge -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 7 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 7 A, dIF/dt =100 A/μs -- 360 -- ns Qrr Reverse Recovery Charge -- 4.5 -- μC

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB ically the warranty therein, which covers Fairchild products.

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Y-Formed ically the warranty therein, which covers Fairchild products.

FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 www.fairchildsemi.com11 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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