DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • R DS(on) = 460 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
  • Ultra Low Gate Charge (Typ.Q g = 17.8 nC)
  • Low Effective Output Capacitance (Typ. C oss.eff = 91 pF)
  • 100% Avalanche Tested
  • RoHS Compliant Application
  • LCD/LED TV and Monitor
  • Lighting
  • Solar Inverter
  • AC-DC Power Supply

Description

The SupreMOS ® MOSFET is Fairchild Semiconductor ®’s next generation of high voltage su per-junction (SJ) technology employing a deep trench filling proc ess that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provi des lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S TO-220F G S D TO-220 G D S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Symbol Parameter FCP7N60N FCPF7N60NT Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 6.8 6.8* A-Continuous (TC = 100oC) 4.3 4.3* IDM Drain Current - Pulsed (Note 1) 20.4 20.4 A EAS Single Pulsed Avalanche Energy (Note 2) 79.4 mJ IAR Avalanche Current 6.8 A EAR Repetitive Avalanche Energy 0.6 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 4.9 V/ns PD Power Dissipation (TC = 25oC) 64.1 30.5 W - Derate above 25oC 0.51 0.24 W/ oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP7N60N FCPF7N60NT Unit RθJC Thermal Resistance, Junction to Case 1.95 4.1 oC/WRθCS Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP7N60N FCP7N60N TO-220AB - - 50 FCPF7N60NT FCPF7N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage I D = 1 mA, VGS = 0 V, TC = 25oC 600 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC- 0 . 6 - V / oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μAVDS = 480 V, VGS = 0 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA2 . 0 - 4 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 3.4 A - 0.46 0.52 Ω gFS Forward Transconductance V DS = 20 V, ID = 3.4 A - 8.5 - S Ciss Input Capacitance VDS = 100 V, VGS = 0 V f = 1 MHz - 719 960 pF Coss Output Capacitance - 30 40 pF Crss Reverse Transfer Capacitance - 2.1 3.2 pF Coss Output Capacitance V DS = 380 V, VGS = 0 V, f = 1 MHz - 17 - pF Cosseff Effective Output Capacitance V DS = 0 V to 380 V, VGS = 0 V - 91 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V,ID = 3.4 A VGS = 10 V (Note 4) - 17.8 35.6 nC Qgs Gate to Source Gate Charge - 3.2 6.3 nC Qgd Gate to Drain “Miller” Charge - 6.0 11.9 nC ESR Equivalent Series Resistance (G-S) Drain Open - 2.5 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 3.4 A RG = 4.7 Ω (Note 4) -1 2 2 4 n s tr Turn-On Rise Time - 6 22 ns td(off) Turn-Off Delay Time - 35 80 ns tf Turn-Off Fall Time - 12 24 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20.4 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD =3.4 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 3.4 A dIF/dt = 100 A/μs -2 1 1- n s Qrr Reverse Recovery Charge - 1.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.8 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com8 Dimensions in Millimeters Mechanical Dimensions TO-220

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com9 Mechanical Dimensions Dimensions in Millimeters TO-220F

FCP7N60N / FCPF7N60NT N-Channel MOSFET ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF TH E APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WO RLDWIDE TERMS AND CONDITIONS , SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms 2Cool™ AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET Global Power ResourceSM Green Bridge™ Green FPS™ Green FPS™ e-Series™ G max™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Datasheet Identification Product Status Definition Advance Information For mative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-C ounterfeiting Policy. Fairchild’s Anti-Count erfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Product s customers buy either from Fairchild directly or fr om Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I64