FCPF36N60NT FAIRCHILD | Alldatasheet

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Technical content

Features

  • R DS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A
  • Ultra Low Gate Charge (Typ. Q g = 86 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 361 pF)
  • 100% Avalanche Tested
  • R o H S C o m p l i a n t Application
  • Solar Inverter
  • AC-DC Power Supply

Description

The SupreMOS ® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provi des lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- verter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Absolute Maximum Ratings TC = 25oC unless otherwise noted. *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP36N60N FCPF36N60NT Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current - Continuous (TC = 25oC) 36 36* A- Continuous (TC = 100oC) 22.7 22.7* IDM Drain Current - Pulsed (Note 1) 108 108* A EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 3.12 mJ dv/dt MOSFET dv/dt 100 V/nsPeak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 312 W - Derate Above 25oC2 . 6W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP36N60N FCPF36N60NT Unit RθJC Thermal Resistance, Junction to Case, Max. 0.4 3.5 oC/WRθCS Thermal Resistance, Case to Heat Sink, Typ. 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5

FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET ©2010 Fairchild Semiconductor Corporation FCP36N60N / FCPF36N60NT Rev. C2 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP36N60N FCP36N60N TO-220 Tube N/A N/A 50 units FCPF36N60NT FCPF36N60NT TO-220F Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage I D = 1 mA, VGS = 0 V, TC = 25oC 600 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC- 0 . 7 - V / oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μAVDS = 480 V, VGS = 0 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA2 . 0 - 4 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 18 A - 81 90 m Ω gFS Forward Transconductance V DS = 20 V, ID = 18 A - 41 - S Ciss Input Capacitance VDS = 100 V, VGS = 0 V, f = 1 MHz - 3595 4785 pF Coss Output Capacitance - 149 200 pF Crss Reverse Transfer Capacitance - 4 6 pF Coss Output Capacitance V DS = 380 V, VGS = 0V, f = 1 MHz - 80 - pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 380 V, VGS = 0 V - 361 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 18 A, VGS = 10 V (Note 4) - 86 112 nC Qgs Gate to Source Gate Charge - 15.4 - nC Qgd Gate to Drain “Miller” Charge - 26.4 - nC ESR Equivalent Series Resistance f = 1 MHz - 1 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 18 A, VGS = 10 V, RG = 4.7 Ω (Note 4) -2 3 5 6 n s tr Turn-On Rise Time - 22 54 ns td(off) Turn-Off Delay Time - 94 198 ns tf Turn-Off Fall Time - 4 18 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 18 A, dIF/dt = 100 A/μs - 574 - ns Qrr Reverse Recovery Charge - 10 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 12 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 18. TO220, Molded, 3-Lead, Non Jedec Variation AB ically the warranty therein, which covers Fairchild products.

Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET ©2010 Fairchild Semiconductor Corporation FCP36N60N / FCPF36N60NT Rev. C2 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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