FCPF250N65S3L1 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET www.onsemi.com Semiconductor Components Industries, LLC, 2017 Publication Order Number: May, 2017, Rev. 1.0 FCPF250N65S3L1/D FCPF250N65S3L1 N-Channel SuperFET® III MOSFET

650 V, 12 A, 250 mΩ

Features

  • 700 V @ T J = 150 oC
  • T y p . RDS(on) = 210 mΩ
  • Ultra Low Gate Charge (Typ. Q g = 24 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 248 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies

Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performanc e. This advanced technology is tailored to minimize c onduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSF ET is very suitable for various power system for miniaturization and higher efficiency. TO-220F GDS G S D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCPF250N65S3L1 Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage - DC ±30 V - AC (f > 1 Hz) ±30 V ID Drain Current - Continuous (TC = 25oC) 12* A - Continuous (TC = 100oC) 7.6* IDM Drain Current - Pulsed (Note 1) 30* A EAS Single Pulsed Avalanche Energy (Note 2) 57 mJ IAS Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 0.31 mJ dv/dt MOSFET dv/dt 100 V/nsPeak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 31 W - Derate Above 25oC0 . 2 5 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCPF250N65S3L1 Unit RθJC Thermal Resistance, Junction to Case, Max. 4.07 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 *Drain current limited by maximum junction temperature.

FCPF250N65S3L1 — N-Channel SuperFET® III MOSFET www.onsemi.com Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Source-Drain Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCPF250N65S3L1 FCPF250N65S3 TO-220F Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC - 0.67 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 1 μAVDS = 520 V, TC = 125oC - 0.77 - IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1.2 mA 2.5 - 4.5 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 6 A - 210 250 m Ω gFS Forward Transconductance V DS = 20 V, ID = 6 A - 7.4 - S Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz -1 0 1 0-p F Coss Output Capacitance - 25 - pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, VGS = 0 V - 248 - pF Coss(er.) Energy Related Output Capacitance V DS = 0 V to 400 V, VGS = 0 V - 33 - pF Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 6 A, VGS = 10 V (Note 4) -2 4- n C Qgs Gate to Source Gate Charge - 6.1 - nC Qgd Gate to Drain “Miller” Charge - 9.7 - nC ESR Equivalent Series Resistance f = 1 MHz - 8.7 - Ω td(on) Turn-On Delay Time VDD = 400 V, ID = 6 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) -1 8- n s tr Turn-On Rise Time - 18 - ns td(off) Turn-Off Delay Time - 49 - ns tf Turn-Off Fall Time - 12 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 6 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 6 A, dIF/dt = 100 A/μs - 251 - ns Qrr Reverse Recovery Charge - 3.4 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ 400 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

4.60 4.30 10.70 10.30 3.00 2.60 3.40 3.00 10.30 9.80 0.90 0.50 (3X) 2.74 2.34 (2X) 2.14 3.30 2.70 B 1.20 1.00 1.20 0.90 (2X) B 19.00 17.70 1 3

0.50 M A

A 2.90 2.50 B 15.70 15.00 2.70 2.30 B 0.60 0.40 6.60 6.20

1 X 45°

NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. F. DRAWING FILE NAME: TO220V03REV1 G. FAIRCHILD SEMICONDUCTOR

www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative © Semiconductor Components Industries, LLC