FCP22N60N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 0.140 Ω ( Typ.)@ VGS = 10V, I D = 11A
  • BV DSS >650V @ T J = 150 oC
  • Ultra Low Gate Charge ( Typ. Qg = 45nC)
  • Low Effective Output Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced technology and precise pro- cess control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S TO-220F FCPF series G D S TO-220 FCP Series G D S MOSFET Maximum Ratings TC = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCP22N60N FCPF22N60NT Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current Continuous (T C = 25 oC) 22 22* AContinuous (T C = 100 oC) 13.8 13.8* IDM Drain Current Pulsed (Note 1) 66 66* A EAS Single Pulsed Avalanche Energy (Note 2) 672 m J IAR Avalanche Current 7.3 A EAR Repetitive Avalanche Energy 2.75 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns MOSFET dv/dt 100 PD Power Dissipation (T C = 25 oC) 205 39 W Derate above 25 oC 1.64 0.31 W/ oC TJ, T STG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP22N60N FCPF22N60NT Units R θJC Thermal Resistance, Junction to Case 0.61 3.2 oC/W R θJS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0. 5 R θJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 2 Package Marking and Ordering Information TC = 25 oC unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantit y FCP22N60N FCP22N60N TO-220 - - 50 FCPF22N60NT FCPF22N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain to Source Breakdown Voltage ID = 1mA, V GS = 0V, T J = 25 oC 600 - - VID = 1mA, V GS = 0V, T J = 150 oC 650 - - ΔBV DSS ΔTJ Breakdown Voltage Temperature Coefficient I D = 1mA, Referenced to 25 oC - 0.68 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 µAVDS = 480V, TJ = 125 oC - - 100 IGSS Gate to Body Leakage Current V GS = ±50V, V DS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = V DS , I D = 250 µA 2.0 3 4.0 V R DS(on) Static Drain to Source On Resistance VGS = 10V, I D = 11A - 0.140 0.165 Ω gFS Forward Transconductance V DS = 20V, I D = 11A - 22 - S C iss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 1950 - pF C oss Output Capacitance - 75.9 - pF C rss Reverse Transfer Capacitance - 3 - pF C oss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 43.2 - pF C oss eff. Effective Output Capacitance V DS = 0V to 480V, V GS = 0V - 196.4 - pF Q g(tot) Total Gate Charge at 10V VDS = 380V, ID = 11A, VGS = 10V (Note 4) - 45 - nC Q gs Gate to Source Gate Charge - 8.7 - nC Q gd Gate to Drain “Miller” Charge - 14.5 - nC ESR Equivalent Series Resistance (G-S) Drain Open, f=1M Hz - 1 - Ω td(on) Turn-On Delay Time VDD = 380V, I D = 11A R G = 4.7 Ω (Note 4) - 16.9 - ns tr Turn-On Rise Time - 16.7 - ns td(off) Turn-Off Delay Time - 49 - ns tf Turn-Off Fall Time - 4 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 66 A VSD Drain to Source Diode Forward Voltage VGS = 0V, I SD = 11A - - 1.2 V trr Reverse Recovery Time VGS = 0V, I SD = 11A dI F/dt = 100A/ µs - 350 - ns Q rr Reverse Recovery Charge - 6 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 7.3A, R G = 25 Ω , Starting T J = 25 °C 3. I SD ≤ 22A, di/dt ≤ 200A/ µs, V DD ≤ 380V, Starting T J = 25 °C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 7 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T V D S D r i v e r R G S a m e T y p e a s D U T V G S • d v / d t c o n t r o l l e d b y R G

  • IS D c o n t r o l l e d b y p u l s e p e r i o d V D D L I S D 1 0 V V G S ( D r i v e r ) I S D ( D U T ) V D S ( D U T ) V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p V S D IF M , B o d y D i o d e F o r w a r d C u r r e n t B o d y D i o d e R e v e r s e C u r r e n t IR M B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h D U T V D S D r i v e r R G S a m e T y p e a s D U T V G S • d v / d t c o n t r o l l e d b y R G
  • IS D c o n t r o l l e d b y p u l s e p e r i o d V D D LL I S D 1 0 V V G S ( D r i v e r ) I S D ( D U T ) V D S ( D U T ) V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p V S D IF M , B o d y D i o d e F o r w a r d C u r r e n t B o d y D i o d e R e v e r s e C u r r e n t IR M B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h G a t e P u l s e P e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - D = G a t e P u l s e W i d t h

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 8 Mechanical Dimensions TO-220

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 9 Mechanical Dimensions TO-220F Dimensions in Millimeters

FCP22N60N / FCPF22N60NT N-Channel MOSFET FCP22N60N / FCPF22N60NT Rev. A2 www.fairchildsemi.com 10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HERE IN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NO T ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATI ON OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES I T CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAI RCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICAL LY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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