FCP20N60 ONSEMI | Alldatasheet

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FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET ©2008 Fairchild Semiconductor Corporation FCP20N60 / FCPF20N60 Rev. C0 www.fairchildsemi.com1 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET

600 V, 20 A, 190 mΩ

Features

  • 650V @ T J = 150°C
  • T y p . RDS(on) = 150 mΩ
  • Ultra Low Gate Charge (Typ. Q g = 75 nC )
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 165 pF )
  • 100% Avalanche Tested

Applications

  • Solar Inverter
  • AC-DC Power Supply

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conducti on loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. TO-220 GDS TO-220F GDS G S D Absolute Maximum Ratings *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP20N60 FCPF20N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (T C = 25°C) - Continuous (TC = 100°C) 12.5 20* 12.5* A A IDM Drain Current - Pulsed (Note 1) 60 60* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (T C = 25°C) - Derate Above 25°C 208 1.67 0.3 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCP20N60 FCPF20N60 Unit RθJC Thermal Resistance, Junction-to-Case 0.6 3.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET ©2008 Fairchild Semiconductor Corporation FCP20N60 / FCPF20N60 Rev. C0 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP20N60 FCP20N60 TO-220 Tube N/A N/A 50 units FCPF20N60 FCPF20N60 TO-220F Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V ID = 250 μA, VGS = 0 V, TJ = 150oC- 6 5 0 - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0 . 6 - V / oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 20 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μAVDS = 480 V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA3 . 0 - 5 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 10 A - 0.15 0.19 Ω gFS Forward Transconductance V DS = 40 V, ID = 10 A - 17 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 2370 3080 pF Coss Output Capacitance - 1280 1665 pF Crss Reverse Transfer Capacitance - 95 - pF Coss Output Capacitance V DS = 480 V, VGS = 0 V, f = 1 MHz - 65 85 pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, VGS = 0 V - 165 - pF Qg Total Gate Charge at 10V VDS = 480 V, ID = 20 A, VGS = 10 V (Note 4) -7 5 9 8 n C Qgs Gate to Source Gate Charge - 13.5 18 nC Qgd Gate to Drain “Miller” Charge - 36 - nC td(on) Turn-On Delay Time VDD = 300 V, ID = 20 A, VGS = 10 V, RG = 25 Ω (Note 4) - 62 135 ns tr Turn-On Rise Time - 140 290 ns td(off) Turn-Off Delay Time - 230 470 ns tf Turn-Off Fall Time - 65 140 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 20 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 20 A, dIF/dt = 100 A/μs - 530 - ns Qrr Reverse Recovery Charge - 10.5 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: I AS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: I SD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics.

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

10.679.65 16.3013.90 3.402.50 1.621.10 6.696.06 "A1"4.704.00 2.852.100.600.36 14.0412.70 ‘ 3.50 ƒƒƒƒ 9.408.13 14.3011.50 8.657.59 321 123 C 16.5115.42 [2.46] SUPPLIER "A" PACKAGESHAPESUPPLIER "B" PACKAGESHAPE 1.000.55SEE NOTE "F" EE E E 2.672.40 2.132.06 OPTIONALCHAMFER 1.621.42 H IF PRESENT, SEE NOTE "D" NOTE "I" FRONT VIEWS BOTTOM VIEW BACK VIEWSIDE VIEW 4.102.70

B 4.90 4.50 16.00 15.60 10.05 9.45 3.40 3.20 3.28 3.08 B 10.36 9.96 1.47 1.24 0.90 0.70 0.45 0.25 30° 2.54 2.54 7.00 2.14 (3.23) B 1 3 SEE NOTE "F"

0.50 M A

A B 2.66 2.42 B 16.07 15.67 2.96 2.56 B 0.60 0.45 0.70 6.88 6.48

1 X 45°

SEE NOTE "F" NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5

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