FCP20N60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 650V @T J = 150°C
  • T y p . RDS(on) = 0.15Ω
  • Ultra low gate charge (typ. Q g = 75nC)
  • Low effective output capacitance (typ. C oss.eff = 165pF)
  • 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. Absolute Maximum Ratings *Drain current limited by maximum junction temperature Thermal Characteristics { z z z { z z z S D G TO-220G SD TO-220FG SD Symbol Parameter FCP20N60 FCPF20N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (T C = 25°C) - Continuous (TC = 100°C) 12.5 20* 12.5* A A IDM Drain Current - Pulsed (Note 1) 60 60* A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (T C = 25°C) - Derate above 25°C 208 1.67 0.3 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCP20N60 FCPF20N60 Unit RθJC Thermal Resistance, Junction-to-Case 0.6 3.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

2 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1 FCP20N60 / FCPF20N60 600V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP20N60 FCP20N60 TO-220 - - 50 FCPF20N60 FCPF20N60 TO-220F - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C- - 6 5 0 - - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C- - 0 . 6 - - V / °C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current V DS = 600V, VGS = 0V VDS = 480V, TC = 125°C µA µA IGSSF Gate-Body Leakage Current, Forward V GS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250µA3 . 0 - - 5 . 0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω gFS Forward Transconductance V DS = 40V, ID = 10A (Note 4) -- 17 -- S Dynamic Characteristics Ciss Input Capacitance V DS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF Coss Output Capacitance -- 1280 1665 pF Crss Reverse Transfer Capacitance -- 95 -- pF Coss Output Capacitance V DS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF Coss eff. Effective Output Capacitance V DS = 0V to 400V, VGS = 0V -- 165 -- pF Switching Characteristics td(on) Turn-On Delay Time V DD = 300V, ID = 20A RG = 25Ω (Note 4, 5) -- 62 135 ns tr Turn-On Rise Time -- 140 290 ns td(off) Turn-Off Delay Time -- 230 470 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge V DS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC Qgs Gate-Source Charge -- 13.5 18 nC Qgd Gate-Drain Charge -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage V GS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time V GS = 0V, IS = 20A dIF/dt =100A/µs (Note 4) -- 530 -- ns Qrr Reverse Recovery Charge -- 10.5 -- µC

6 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1 FCP20N60 / FCPF20N60 600V N-Channel MOSFET Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L I AS 2----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS =L I AS 2----2 1EAS =L I AS 2----2 1----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

7 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1 FCP20N60 / FCPF20N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

8 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1 FCP20N60 / FCPF20N60 600V N-Channel MOSFET Mechanical Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters

9 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1 FCP20N60 / FCPF20N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø 3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. FCP20N60 / FCPF20N60 600V N-Channel MOSFET DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I16 10 www.fairchildsemi.com FCP20N60 / FCPF20N60 Rev. A1