FCPF190N60E-ND FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 6 5 0 V @ TJ = 150°C
  • T y p . RDS(on) = 160 mΩ
  • Ultra Low Gate Charge (Typ. Q g = 63 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 178 pF)
  • 100% Avalanche Tested
  • An Integrated Gate Resistor
  • R o H S C o m p l i a n t

Applications

  • LCD / LED / PDP TV Lighting
  • Solar Inverter
  • AC-DC Power Supply

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive se ries offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part nu mber suffix, this family helps manage EMI issues and allows for easier design implementa- tion. For faster switching in a pplications where switching losses must be at an absolute minimum, please consider the Super- FET II MOSFET series. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP190N60E FCPF190N60E Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1 Hz) ±30 V ID Drain Current - Continuous (TC = 25oC) 20.6 20.6* A- Continuous (TC = 100oC) 13.1 13.1* IDM Drain Current - Pulsed (Note 1) 61.8 61.8* A EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt MOSFET dv/dt 100 V/nsPeak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 208 39 W - Derate Above 25oC 1.67 0.31 W/ oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP190N60E FCPF190N60E Unit RθJC Thermal Resistance, Junction to Case, Max. 0.6 3.2 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 TO-220 GDS TO-220F GDS G S D

FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET ©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C10 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP190N60E FCP190N60E TO-220 Tube N/A N/A 50 units FCPF190N60E FCPF190N60E TO-220F Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - VVGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC - 0.67 - V/ oC BVDS Drain to Source Avalanche Breakdown Voltage VGS = 0 V, ID = 20 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 1 μAVDS = 480 V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current V GS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA 2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 10 A - 0.16 0.19 Ω gFS Forward Transconductance V DS = 20 V, ID = 10 A - 20 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 2385 3175 pF Coss Output Capacitance - 1795 2396 pF Crss Reverse Transfer Capacitance - 110 165 pF Coss Output Capacitance V DS = 380 V, VGS = 0 V, f = 1 MHz - 42 - pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 480 V, VGS = 0 V - 178 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, VGS = 10 V (Note 4) -6 3 8 2 n C Qgs Gate to Source Gate Charge - 10 - nC Qgd Gate to Drain “Miller” Charge - 24 - nC ESR Equivalent Series Resistance f = 1 MHz - 5 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 10 A, VGS = 10 V, RG = 4.7 Ω (Note 4) -2 3 5 6 n s tr Turn-On Rise Time - 14 38 ns td(off) Turn-Off Delay Time - 101 212 ns tf Turn-Off Fall Time - 15 40 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/μs - 308 - ns Qrr Reverse Recovery Charge - 4.8 - μC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. I AS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.

Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB ically the warranty therein, which covers Fairchild products.

Figure 20. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET ©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C10 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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