FCPF190N60E-F154 ONSEMI | Alldatasheet

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To learn more about onsemi™, please visit our website at www.onsemi.com ON Semiconductor Is Now onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ onsemi ” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi . “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

© Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0

1 Publication Order Number:

FCPF190N60E−F154/D MOSFET – N-Channel, SUPERFET/C0041 II 600 V, 20.6 A, 190 m/C0087 FCPF190N60E-F154

Description

SUPERFET II MOSFET is ON Semiconductor’s brand −new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Features

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 160 m/C0087
  • Ultra Low Gate Charge (Typ. Qg = 63 nC)
  • Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter TO−220F Ultra Narrow Lead CASE 221BN See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCPF190N60E = Specific Device Code MARKING DIAGRAM VDSS RDS(ON) MAX I D MAX 600 V 190 m/C0087 @ 10 V 20.6 A MOSFET D S G DG S $Y&Z&3&K FCPF 190N60E

FCPF190N60E−F154 www.onsemi.com MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage − DC ±20 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 20.6* A − Continuous (TC = 100°C) 13.1* IDM Drain Current − Pulsed (Note 1) 61.8* A EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ IAS Avalanche Current (Note 2) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns MOSFET dv/dt 100 PD Power Dissipation (TC = 25°C) 39 W − Derate Above 25°C 0.31 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8″ from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I AS = 4 A, VDD = 50 V, RG = 25 /C0087, starting TJ = 25°C. 3. I SD ≤ 10 A, di/dt ≤ 200 A//C0109s, VDD ≤ BVDSS, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R/C0113JC Thermal Resistance, Junction to Case, Max. 3.2 /C0095C/W R/C0113JA Thermal Resistance, Junction to Ambient, Max. 62.5 /C0095C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FCPF190N60E−F154 FCPF190N60E TO−220F (Pb−Free)

50 Units / Tube

FCPF190N60E−F154 www.onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 10 mA, TJ =2 5/C0095C 600 − − V VGS =0V , ID = 10 mA, TJ = 150/C0095C 650 − − V /C0068BVDSS / /C0068TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25/C0095C − 0.67 − V//C0095C BVDS Drain−Source Avalanche Breakdown Voltage VGS =0V , ID = 20 A − 700 − V IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS =0V − − 1.0 /C0109A VDS = 480 V, TC = 125/C0095C − − 10 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS =0V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =V DS, ID = 250 /C0109A 2.5 − 3.5 V RDS(on) Static Drain to Source On Resistance VGS =1 0V , ID =1 0A − 0.16 0.19 /C0087 gFS Forward Transconductance VDS =2 0V , ID =1 0A − 20 − S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS =2 5V , VGS = 0 V, f = 1 MHz − 2385 3175 pF Coss Output Capacitance − 1795 2396 pF Crss Reverse Transfer Capacitance − 110 165 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 42 − pF Coss (eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS =0V − 178 − pF Qg(tot) Total Gate Charge at 10 V VDS = 380 V, ID = 10 A, VGS =1 0V (Note 4) − 63 82 nC Qgs Gate to Source Gate Charge − 10 − nC Qgd Gate to Drain “Miller” Charge − 24 − nC ESR Equivalent Series Resistance f = 1 MHz − 5 − /C0087 SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time VDD = 380 V, ID = 10 A, VGS =1 0V , Rg = 4.7 /C0087 (Note 4) − 23 56 ns tr Turn-On Rise Time − 14 38 ns td(off) Turn-Off Delay Time − 101 212 ns tf Turn-Off Fall Time − 15 40 ns SOURCE−DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current − − 20.2 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 60.6 A VSD Source to Drain Diode Forward Voltage VGS = 0V , ISD = 1 0A − − 1.2 V trr Reverse Recovery Time VDD = 400 V, ISD = 1 0A , dIF/dt = 100 A//C0109s − 308 − ns Qrr Reverse Recovery Charge − 4.8 − /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

2 LIAS

Figure 16. Peak Recovery dv/dt Test Circuit & Waveforms

  • dv/dt controlled by RG
  • ISD controlled by pulse period Driver VGS (Driver) ISD (DUT) VDS (DUT) VSD IRM 10 V di/dt VDD IFM, Body Diode Forward Current Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop D /C0043 Gate Pulse Width Gate Pulse Period SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

FCPF190N60E−F154 www.onsemi.com PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221BN ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative