FCPF190N60-F152 ONSEMI | Alldatasheet

Document overview

  • PDF pages: 10

Technical content

To learn more about onsemi™, please visit our website at www.onsemi.com ON Semiconductor Is Now onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ onsemi ” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi . “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

FCPF190N60-F152 — N-Channel MOSFET ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FCPF190N60-F152/D Absolute Maximum Ratings TC = 25oC unless otherwise noted *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCPF190N60-F152 Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage -DC ±20 V-AC (f >1Hz) ±30 ID Drain Current -Continuous (TC = 25oC) 20.2* A-Continuous (TC = 100oC) 12.7* IDM Drain Current - Pulsed (Note 1) 60.6* A EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns MOSFET dv/dt 100 V/ns PD Power Dissipation (TC = 25oC) 39 W - Derate above 25oC0 .31 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCPF190N60-F152 Unit RθJC Thermal Resistance, Junction to Case 3.2 oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 FCPF190N60-F152 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ

Features

  • 650 V @T J = 150°C
  • M a x . RDS(on) = 199 mΩ
  • Ultra low gate charge (typ. Q g = 57 nC)
  • Low effective output capacitance (typ. C oss.eff = 160 pF)
  • 100% avalanche tested Aplications
  • LCD / LED / PDP TV Lighting
  • Solar Inverter
  • AC-DC Power Supply G S D TO-220FG SD

Description

SuperFET®II MOSFET is ON Semiconductor’s first gen- eration of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outs tanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system minia-turization and higher efficiency.

FCPF190N60-F152 — N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Eco Status Packaging Type Quantity FCPF190N60 FCPF190N60-F152 TO-220F Green Tube 50 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25oC - 0.67 - V/ oC BVDS Drain-Source Avalanche Breakdown Voltage V GS = 0V, ID = 20A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μAVDS = 480V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2 .5 - 3 .5 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 10A - 0.17 0.199 Ω gFS Forward Transconductance VDS = 20V, ID = 10A -2 1- S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 2220 2950 pF Coss Output Capacitance - 1630 2165 pF Crss Reverse Transfer Capacitance - 85 128 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 42 - pF Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 160 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 10A VGS = 10V (Note 4) -5 7 7 4 n C Qgs Gate to Source Gate Charge - 9 - nC Qgd Gate to Drain “Miller” Charge - 21 - nC ESR Equivalent Series Resistance f = 1MHz - 1 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 10A VGS = 10V, Rg = 4.7Ω (Note 4) -2 0 5 0 n s tr Turn-On Rise Time - 10 30 ns td(off) Turn-Off Delay Time - 64 138 ns tf Turn-Off Fall Time - 5 20 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 10A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 10A dIF/dt = 100A/μs - 280 - ns Qrr Reverse Recovery Charge - 3.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com

Figure 12. Transient Thermal Response Curve

FCPF190N60-F152 — N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com

FCPF190N60-F152 — N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width www.onsemi.com 2www.onsemi.com www.onsemi.com

FCPF190N60-F152 — N-Channel MOSFET Mechanical Dimensions * Front/Back Side Isolation Voltage : AC 2500V TO-220F TO-220, MOLDED, 3LD, FULL PACK, EIAJ SC91 www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative © Semiconductor Components Industries, LLC ❖