FCP16N60N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 0.17 W ( Typ.)@ VGS = 10V, I D = 8A
  • Ultra low gate charge ( Typ. Qg = 40.2nC)
  • Low effective output capacitance
  • 100% avalanche tested
  • RoHS compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S TO-220F FCPF Series G S D G D S TO-220 FCP Series MOSFET Maximum Ratings TC = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCP16N60N FCPF16N60NT Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (T C = 25 oC) 16.0 16.0* A-Continuous (T C = 100 oC) 10.1 10.1* IDM Drain Current - Pulsed (Note 1) 48.0 48.0* A EAS Single Pulsed Avalanche Energy (Note 2) 355 m J IAR Avalanche Current 5.3 A EAR Repetitive Avalanche Energy 1.34 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (T C = 25 oC) 134.4 35.7 W - Derate above 25 oC 1.08 0.29 W/ oC TJ, T STG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP16N60N FCPF16N60NT Units R qJC Thermal Resistance, Junction to Case 0.93 3.5 oC/W R qCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0. 5 R qJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature

FCP16N60N / FCPF16N60NT N-Channel MOSFET FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com 2 Package Marking and Ordering Information

Electrical Characteristics

TC = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quanti ty FCP16N60N FCP16N60N TO-220 - - 50 FCPF16N60NT FCPF16N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain to Source Breakdown Voltage I D = 1mA, V GS = 0V, T C = 25 oC 600 - - V DBV DSS DTJ Breakdown Voltage Temperature Coefficient I D = 1mA, Referenced to 25 oC - 0.73 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 mAVDS = 480V, VGS = 0V, T C = 125 oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = V DS , I D = 250 mA 2.0 - 4.0 V R DS(on) Static Drain to Source On Resistance VGS = 10V, I D = 8A - 0.170 0.199 W gFS Forward Transconductance V DS = 40V, I D = 8A - 13 - S C iss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 1630 2170 pF C oss Output Capacitance - 70 95 pF C rss Reverse Transfer Capacitance - 5 10 pF C oss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 40 60 pF C oss eff. Effective Output Capacitance V DS = 0V to 480V, V GS = 0V - 176 - pF Q g(tot) Total Gate Charge at 10V VDS = 380V, ID = 8A, VGS = 10V (Note 4) - 40.2 52.3 nC Q gs Gate to Source Gate Charge - 6.7 - nC Q gd Gate to Drain “Miller” Charge - 12.9 - nC ESR Equivalent Series Resistance (G-S) Drain Open 2.9 W td(on) Turn-On Delay Time VDD = 380V, I D = 8A R G = 4.7 W (Note 4) - 15.8 41.6 ns tr Turn-On Rise Time - 15.5 41.0 ns td(off) Turn-Off Delay Time - 60.3 130.6 ns tf Turn-Off Fall Time - 20.2 50.4 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, I SD = 8A - - 1.2 V trr Reverse Recovery Time VGS = 0V, I SD = 8A dI F/dt = 100A/ ms - 319 - ns Q rr Reverse Recovery Charge - 4.4 - mC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 5.3A, R G = 25 W , Starting T J = 25 °C 3. I SD £ 16A, di/dt £ 200A/ ms, V DD = 380V, Starting T J = 25 °C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP16N60N / FCPF16N60NT N-Channel MOSFET FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com 6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP16N60N / FCPF16N60NT N-Channel MOSFET FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com 7 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T V D S D r i v e r R G S a m e T y p e a s D U T V G S • d v / d t c o n t r o l l e d b y R G

  • IS D c o n t r o l l e d b y p u l s e p e r i o d V D D L I S D 1 0 V V G S ( D r i v e r ) I S D ( D U T ) V D S ( D U T ) V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p V S D IF M , B o d y D i o d e F o r w a r d C u r r e n t B o d y D i o d e R e v e r s e C u r r e n t IR M B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h D U T V D S D r i v e r R G S a m e T y p e a s D U T V G S • d v / d t c o n t r o l l e d b y R G
  • IS D c o n t r o l l e d b y p u l s e p e r i o d V D D LL I S D 1 0 V V G S ( D r i v e r ) I S D ( D U T ) V D S ( D U T ) V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p V S D IF M , B o d y D i o d e F o r w a r d C u r r e n t B o d y D i o d e R e v e r s e C u r r e n t IR M B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h G a t e P u l s e P e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - D = G a t e P u l s e W i d t h

FCP16N60N / FCPF16N60NT N-Channel MOSFET FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com 8 Dimensions in Millimeters Mechanical Dimensions TO-220

FCP16N60N / FCPF16N60NT N-Channel MOSFET FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com 9 Mechanical Dimensions TO-220F (7.00) (0.70) MAX1.47 (30 15.87 –0.20 6.68 –0.20 9.75 –0.30 4.70 –0.20 10.16 –0.20 (1.00x45°) 2.54 –0.20 0.80 –0.10 9.40 –0.20 2.76 –0.20 0.35 –0.10 ø3.18 –0.10 2.54TYP [2.54 –0.20] 2.54TYP [2.54 –0.20] 0.50+0.10 –0.05 Dimensions in Millimeters

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