FCP13N60N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
  • Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
  • Low Effective Output Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By util izing this advanced te chnology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S TO-220F FCPF Series G S D TO-220 FCP SeriesG D S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Symbol Parameter FCP13N60N FCPF13N60NT Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 13 13* A-Continuous (TC = 100oC) 8.2 8.2* IDM Drain Current - Pulsed (Note 1) 39 39 A EAS Single Pulsed Avalanche Energy (Note 2) 235 mJ IAR Avalanche Current 4.3 A EAR Repetitive Avalanche Energy 1.16 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (TC = 25oC) 116 33.8 W - Derate above 25oC 0.93 0.27 W/ oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP13N60N FCPF13N60NT Units RθJC Thermal Resistance, Junction to Case 1.07 3.7 oC/WRθCS Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP13N60N FCP13N60N TO-220 - - 50 FCPF13N60NT FCPF13N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage I D = 1mA, VGS = 0V, TC = 25oC 600 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25oC - 0.73 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μAVDS = 480V, VGS = 0V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250μA2 . 0 - 4 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 6.5A - 0.244 0.258 Ω gFS Forward Transconductance V DS = 40V, ID = 6.5A - 16.3 - S Ciss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 1325 1765 pF Coss Output Capacitance - 50 65 pF Crss Reverse Transfer Capacitance - 3 5 pF Coss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 30 - pF Cosseff Effective Output Capacitance V DS = 0V to 480V, VGS = 0V - 145 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V,ID = 6.5A VGS = 10V (Note 4) - 30.4 39.5 nC Qgs Gate to Source Gate Charge - 6.0 - nC Qgd Gate to Drain “Miller” Charge - 9.5 - nC ESR Equivalent Series Resistance (G-S) Drain Open - 2.8 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 6.5A RG = 4.7Ω (Note 4) -1 4 . 5 3 9 n s tr Turn-On Rise Time - 10.6 31.2 ns td(off) Turn-Off Delay Time - 45 100 ns tf Turn-Off Fall Time - 9.8 29.6 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 13 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 39 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 6.5A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 6.5A dIF/dt = 100A/μs - 287 - ns Qrr Reverse Recovery Charge - 3.5 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G

  • I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G
  • I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com8 Mechanical Dimensions TO-220 Dimensions in Millimeters

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com9 Mechanical Dimensions TO-220F Dimensions in Millimeters

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WI THOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WO RLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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