FCPF11N60F ONSEMI | Alldatasheet

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FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 www.fairchildsemi.com1 FCPF11N60F N-Channel SuperFET® FRFET® MOSFET

600 V, 11 A, 380 mΩ

Features

  • 600 V @ T J = 150°C
  • T y p . RDS(on) = 320 mΩ
  • Fast Recovery Type (t rr = 120 ns)
  • Ultra Low Gate Charge (Typ. Q g = 40 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 95 pF)
  • 100% Avalanche Tested
  • R o H S c o m p l i a n t

Applications

Description

SuperFET® MOSFET is Fairchild Se miconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance te chnology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super- FET FRFET ® MOSFET’s optimized body diode reverse recov- ery performance can remove additional component and improve system reliability.

  • LCD/LED/PDP TV • Solar Inverter
  • Lighting • AC-DC Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted. * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FCPF11N60F Unit VDSS Drain to Source Voltage 600 V ID Drain Current - Continuous (TC = 25oC) 11* A- Continuous (TC = 100oC) 7* IDM Drain Current - Pulsed (Note 1) 33* A VGSS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 36 W - Derate Above 25oC0 . 2 9 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCPF11N60F Unit RθJC Thermal Resistance, Junction to Case, Max. 3.5 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 oC/W TO-220F GDS G S D

FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCPF11N60F FCPF11N60F TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V VGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0 . 6 - V / oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 11 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μAVDS = 480 V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA 3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 5.5 A - 0.32 0.38 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.5 A -6- S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz - 1148 1490 pF Coss Output Capacitance - 671 870 pF Crss Reverse Transfer Capacitance - 63 82 pF Coss Output Capacitance V DS = 480 V, VGS = 0 V, f = 1.0 MHz - 35 - pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, VGS = 0 V - 95 - pF Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4) -4 0 5 2 n C Qgs Gate to Source Gate Charge - 7.2 - nC Qgd Gate to Drain “Miller” Charge - 21 - nC td(on) Turn-On Delay Time VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4) -3 4 8 0 n s tr Turn-On Rise Time - 98 205 ns td(off) Turn-Off Delay Time - 119 250 ns tf Turn-Off Fall Time - 56 120 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 11 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 11 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 11 A, dIF/dt = 100 A/μs - 120 - ns Qrr Reverse Recovery Charge - 0.8 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 www.fairchildsemi.com8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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