FCP11N60F FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 650V @T J = 150°C
  • T y p . RDS(on) = 0.32Ω
  • Fast Recovery Type ( t rr = 120ns)
  • Ultra Low Gate Charge (typ. Q g = 40nC)
  • Low Effective Output Capacitance (typ. C osseff.=95pF)
  • 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Absolute Maximum Ratings * Drain current limited by maximum junction termperature. Thermal Characteristics ! " ! " ! " ! " S D G TO-220G SD TO-220FG SD Symbol Parameter FCP11N60F FCPF11N60F Units ID Drain Current - Continuous (T C = 25°C) 11 11 * A - Continuous (TC = 100°C) 7 7 * A IDM Drain Current - Pulsed (Note 1) 33 33 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 125 36 * W - Derate above 25°C 1.0 0.29 * W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FCP11N60F FCPF11N60F Units RθJC Thermal Resistance, Junction-to-Case 1.0 3.5 °C /W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C /W

2 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FCP11N60F FCP11N60F TO-220 -- -- 50 FCPF11N60F FCPF11N60F TO-220F -- -- 50 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 11 A -- 700 -- V IDSS Zero Gate Voltage Drain Current V DS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA3 . 0 - - 5 . 0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω gFS Forward Transconductance V DS = 40 V, ID = 5.5 A (Note 4) -- 9.7 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1148 1490 pF Coss Output Capacitance -- 671 870 pF Crss Reverse Transfer Capacitance -- 63 82 pF Coss Output Capacitance V DS = 480 V, VGS = 0 V, f = 1.0 MHz -- 35 -- pF Coss eff. Effective Output Capacitance V DS = 0V to 480 V, VGS = 0 V -- 95 -- pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) -- 34 80 ns tr Turn-On Rise Time -- 98 205 ns td(off) Turn-Off Delay Time -- 119 250 ns tf Turn-Off Fall Time -- 56 120 ns Qg Total Gate Charge V DS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) -- 40 52 nC Qgs Gate-Source Charge -- 7.2 -- nC Qgd Gate-Drain Charge -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 11 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 11 A, dIF / dt = 100 A/µs (Note 4) -- 120 -- ns Qrr Reverse Recovery Charge -- 0.8 -- µC

6 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L I AS 2----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS =L I AS 2----2 1EAS =L I AS 2----2 1----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

7 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

8 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Mechanical Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters

9 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Mechanical Dimensions (Continued) (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50+0.10 –0.05 TO-220F Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 10 www.fairchildsemi.com FCP11N60F/FCPF11N60F Rev. A FCP11N60F/FCPF11N60F 600V N-Channel MOSFET DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I16