FCPF11N60

FCPF11N60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 650V @T j = 150°C
• Typ. Rds(on)=0.32 Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested Absolute Maximum Ratings TC = 25°C unless otherwise noted * Drain current limited by maximum junction termperature Thermal Characteristics Symbol Parameter FCP11N60 FCPF11N60 Units ID Drain Current - Continuous (TC = 25°C) 11 11* A - Continuous (TC = 100°C) 77 * A IDM Drain Current - Pulsed (Note 1) 33 33* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 125 36 W - Derate above 25°C 1.0 0.29 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FCP11N60 FCPF11N60 Units RθJC Thermal Resistance, Junction-to-Case 1.0 3.5 °C /W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C /W TO-220 FCP SeriesG SD TO-220F FCPF SeriesG SD
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Rev. B, March 2004 FCP11N60/FCPF11N60 ©2004 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coef- ficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 11 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) -- 9.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1148 1490 pF Coss Output Capacitance -- 671 870 pF Crss Reverse Transfer Capacitance -- 63 82 pF Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz -- 35 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) -- 34 80 ns tr Turn-On Rise Time -- 98 205 ns td(off) Turn-Off Delay Time -- 119 250 ns tf Turn-Off Fall Time -- 56 120 ns Qg Total Gate Charge VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) -- 40 52 nC Qgs Gate-Source Charge -- 7.2 -- nC Qgd Gate-Drain Charge -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 11 A, dIF / dt = 100 A/µs (Note 4) -- 390 -- ns Qrr Reverse Recovery Charge -- 5.7 -- µC

©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L I AS 2----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS =L I AS 2----2 1EAS =L I AS 2----2 1----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

©2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FCP11N60/FCPF11N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

• ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
• ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Rev. B, March 2004©2004 Fairchild Semiconductor Corporation FCP11N60/FCPF11N60 Package Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters

Rev. B, March 2004 FCP11N60/FCPF11N60 ©2004 Fairchild Semiconductor Corporation Package Dimensions (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50+0.10 –0.05 TO-220F Dimensions in Millimeters

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