FCP4N60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 6 5 0 V @ TJ = 150°C
  • T y p . RDS(on) = 1.0Ω
  • Ultra low gate charge (typ. Q g = 12.8nC)
  • Low effective output capacitance (typ. C oss.eff = 32pF)
  • 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Absolute Maximum Ratings Thermal Characteristics D G S TO-220 FCP SeriesG SD Symbol Parameter FCP4N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 3.9 2.5 A A IDM Drain Current - Pulsed (Note 1) 11.7 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 128 mJ IAR Avalanche Current (Note 1) 3.9 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25°C 0.4 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCP4N60 Unit RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W

2 www.fairchildsemi.com FCP4N60 Rev. A FCP4N60 600V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP4N60 FCP4N60 TO-220 -- -- 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 3.9A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.0A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40V, ID = 2.0A (Note 4) -- 3.2 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 415 540 pF Coss Output Capacitance -- 210 275 pF Crss Reverse Transfer Capacitance -- 19.5 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 16 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, ID = 3.9A RG = 25Ω (Note 4, 5) -- 16 45 ns tr Turn-On Rise Time -- 45 100 ns td(off) Turn-Off Delay Time -- 36 85 ns tf Turn-Off Fall Time -- 30 70 ns Qg Total Gate Charge VDS = 480V, ID = 3.9A VGS = 10V (Note 4, 5) -- 12.8 16.6 nC Qgs Gate-Source Charge -- 2.4 -- nC Qgd Gate-Drain Charge -- 7.1 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.7 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.9A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 3.9A dIF/dt =100A/μs (Note 4) -- 277 -- ns Qrr Reverse Recovery Charge -- 2.07 -- μC

5 www.fairchildsemi.com FCP4N60 Rev. A FCP4N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

6 www.fairchildsemi.com FCP4N60 Rev. A FCP4N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms

7 www.fairchildsemi.com FCP4N60 Rev. A FCP4N60 600V N-Channel MOSFET Mechanical Dimensions Dimensions in MillimetersDimensions in Millimeters Mechanical Dimensions Dimensions in Millimeters TO-220

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