FCP360N65S3R0 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 310 m/C0087
  • Ultra Low Gate Charge (Typ. Qg = 18 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter TO−220−3LD CASE 340AT See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com D S G G D S VDSS RDS(ON) MAX I D MAX

650 V 360 m/C0087 @ 10 V 10 A

$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCP360N65S3R0 = Specific Device Code $Y&Z&3&K FCP360 N65S3R0

www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage DC ±30 V AC (f > 1 Hz) ±30 V ID Drain Current Continuous (TC = 25°C) 10 A Continuous (TC = 100°C) 6 IDM Drain Current Pulsed (Note 1) 25 A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 1) 2.1 A EAR Repetitive Avalanche Energy (Note 1) 0.83 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 83 W Derate Above 25°C 0.67 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 2.1 A, RG = 25 /C0087, starting TJ = 25°C. 3. I SD ≤ 5 A, di/dt ≤ 200 A//C0109s, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R/C0113JC Thermal Resistance, Junction to Case, Max. 1.5 /C0095C/W R/C0113JA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP360N65S3R0 FCP360N65S3R0 TO−220 Tube N/A N/A 50 Units

www.onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 1 mA, TJ =2 5/C0095C 650 − − V VGS =0V , ID = 1 mA, TJ = 150/C0095C 700 − − V /C0068BVDSS//C0068TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25/C0095C − 0.68 − V//C0095C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 1 /C0109A VDS = 520 V, TC = 125/C0095C − 0.58 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =0V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =V DS, ID = 0.2 mA 2.5 − 4.5 V RDS(on) Static Drain to Source On Resistance VGS =1 0V , ID =5A − 310 360 m/C0087 gFS Forward Transconductance VDS =2 0V , ID =5A − 6 − S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz − 730 − pF Coss Output Capacitance − 15 − pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V − 173 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V − 26 − pF Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 5 A, VGS =1 0V (Note 4) − 18 − nC Qgs Gate to Source Gate Charge − 4.3 − nC Qgd Gate to Drain “Miller” Charge − 7.6 − nC ESR Equivalent Series Resistance f = 1 MHz − 1 − /C0087 SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time VDD = 400 V, ID =5A , VGS =1 0V , Rg = 4.7 /C0087 (Note 4) − 12 − ns tr Turn-On Rise Time − 11 − ns td(off) Turn-Off Delay Time − 34 − ns tf Turn-Off Fall Time − 10 − ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current − − 10 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 25 A VSD Source to Drain Diode Forward Voltage VGS =0V , ISD =5A − − 1.2 V trr Reverse Recovery Time VGS =0V , ISD = 5 A, dIF/dt = 100 A//C0109s − 241 − ns Qrr Reverse Recovery Charge − 2.4 − /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13818GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−220−3LD © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative