FCP25N60N

FCP25N60N DIODES | Alldatasheet

Document overview

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Technical content

Features

• R DS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. C oss.eff = 262 pF)
• 100% Avalanche Tested
• RoHS Compliant

Applications

• Solar Inverter
• AC-DC Power Supply

Description

The SupreMOS® MOSFET is Fairchild Semiconductor ®’s next- generation of high voltage super-junction (SJ) technology employing a deep trench filling proc ess that differentiate it from the conventional MOSFETs. This advanced technology and pre- cise process control provide lo west Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applica- tions such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S TO-220G SD MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCP25N60N_F102 Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current Continuous (TC = 25oC) 25 AContinuous (TC = 100oC) 16 IDM Drain Current Pulsed (Note 1) 75 A EAS Single Pulsed Avalanche Energy (Note 2) 861 mJ IAR Avalanche Current 8.3 A EAR Repetitive Avalanche Energy 2.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/nsMOSFET dv/dt 100 PD Power Dissipation (TC = 25oC) 216 W Derate above 25oC1 . 7 2 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP25N60N_F102 Unit RθJC Thermal Resistance, Junction to Case 0.58 oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 *Drain current limited by maximum junction temperature

FCP25N60N_F102 N-Channel MOSFET www.fairchildsemi.com2©2010 Fairchild Semiconductor Corporation FCP25N60N_F102 Rev. C0 Package Marking and Ordering Information TC = 25oC unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP25N60N FCP25N60N_F02 TO220 - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage I D = 1 mA, VGS = 0 V,TJ = 25oC6 0 0 - -V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC - 0.74 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μAVDS = 480 V, TJ = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA 2.0 - 4.0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 12.5 A - 0.107 0.125 Ω gFS Forward Transconductance V DS = 20 V, ID = 12.5 A - - S Ciss Input Capacitance VDS = 100 V, VGS = 0 V f = 1 MHz - 2520 3352 pF Coss Output Capacitance - 103 137 pF Crss Reverse Transfer Capacitance - 3.2 5 pF Coss Output Capacitance V DS = 380 V, VGS = 0 V, f = 1 MHz - 55 - pF Cosseff. Effective Output Capacitance V DS = 0 V to 480 V, VGS = 0 V - 262 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 12.5 A, VGS = 10 V (Note 4) -5 7 7 4 n C Qgs Gate to Source Gate Charge - 10 - nC Qgd Gate to Drain “Miller” Charge - 18 - nC ESR Equivalent Series Resistance (G-S) Drain Open, f = 1 MHz - 1 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 12.5 A RG = 4.7 Ω (Note 4) -2 1 5 2 n s tr Turn-On Rise Time - 22 54 ns td(off) Turn-Off Delay Time - 68 146 ns tf Turn-Off Fall Time - 5 20 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 25 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 75 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 12.5 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 12.5 A dIF/dt = 100 A/μs - 370 - ns Qrr Reverse Recovery Charge - 7 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8.3 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 25 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCP25N60N_F102 N-Channel MOSFET www.fairchildsemi.com5©2010 Fairchild Semiconductor Corporation FCP25N60N_F102 Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCP25N60N_F102 N-Channel MOSFET www.fairchildsemi.com6©2010 Fairchild Semiconductor Corporation FCP25N60N_F102 Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

• ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
• ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

FCP25N60N_F102 N-Channel MOSFET www.fairchildsemi.com7©2010 Fairchild Semiconductor Corporation FCP25N60N_F102 Rev. C0 Mechanical Dimensions TO220-3L Dimensions in Millimeters

FCP25N60N_F102 N-Channel MOSFET www.fairchildsemi.com8©2010 Fairchild Semiconductor Corporation FCP25N60N_F102 Rev. C0 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF TH E APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WO RLDWIDE TERMS AND CONDITIONS , SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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