FCP16N60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 6 5 0 V @ TJ = 150°C
  • Typ. Rds(on)=0.22 :
  • Ultra low gate charge (typ. Qg=45nC)
  • Low effective output capacitance (typ. Coss.eff=110pF)
  • 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-220 FCP SeriesG SD TO-220F FCPF SeriesG SD D G S Absolute Maximum Ratings Symbol Parameter FCP16N60 FCPF16N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (T C = 25qC) - Continuous (TC = 100qC) 10.1 16* 10.1* A A IDM Drain Current - Pulsed (Note 1) 48 48* A VGSS Gate-Source voltage r 30 V EAS Single Pulsed Avalanche Energy (Note 2) tbd mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (T C = 25qC) - Derate above 25qC 167 1.33 37.9 0.3 W W/qC TJ, TSTG Operating and Storage Temperature Range -55 to +150 qC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 qC Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit RTJC Thermal Resistance, Junction-to-Case 0.75 3.3 qC/W RTJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 qC/W *Drain current limited by maximum junction temperature

2 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP16N60 FCP16N60 TO-220 - - 50 FCPF16N60 FCPF16N60 TO-220F - - 50 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, ID = 250PA, TJ = 25qC 600 -- -- V VGS = 0V, ID = 250PA, TJ = 150qC -- 650 -- V 'BVDSS / 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, Referenced to 25qC -- 0.6 -- V/ qC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A -- 700 -- V IDSS Zero Gate Voltage Drain Current V DS = 600V, VGS = 0V VDS = 480V, TC = 125qC PA PA IGSSF Gate-Body Leakage Current, Forward V GS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250PA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8A -- 0.22 0.26 : gFS Forward Transconductance V DS = 40V, ID = 8A (Note 4) -- 11.5 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, VGS = 0V, f = 1.0MHz -- 1610 2100 pF Coss Output Capacitance -- 870 1135 pF Crss Reverse Transfer Capacitance -- 65 -- pF Coss Output Capacitance V DS = 480V, VGS = 0V, f = 1.0MHz -- 45 58 pF Coss eff. Effective Output Capacitance V DS = 0V to 400V, VGS = 0V -- 110 -- pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 300V, ID = 16A RG = 25: (Note 4, 5) -- 42 90 ns tr Turn-On Rise Time -- 95 200 ns td(off) Turn-Off Delay Time -- 150 320 ns tf Turn-Off Fall Time -- 45 95 ns Qg Total Gate Charge V DS = 480V, ID = 16A VGS = 10V (Note 4, 5) -- 50 66 nC Qgs Gate-Source Charge -- 9.2 12 nC Qgd Gate-Drain Charge -- 25 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage V GS = 0V, IS =16A -- -- 1.4 V trr Reverse Recovery Time V GS = 0V, IS = 16A dIF/dt =100A/Ps (Note 4) -- 450 -- ns Qrr Reverse Recovery Charge -- 8.2 -- PC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25:, Starting TJ = 25qC 3. ISD d 16A, di/dt d 200A/Ps, VDD d BVDSS, Starting TJ = 25qC 4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

6 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50Kൎ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50Kൎ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS=L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS tp VDD IAS VDS(t) ID(t) Time 10V DUT RG L ID tp EAS=L IAS 2----2 1EAS=L IAS 2----2 1----2 BVDSS-VDD BVDSS VDD VDS BVDSS tp VDD IAS VDS(t) ID(t) Time 10V DUT RG LL IDID tp Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

7 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G

  • I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G
  • I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h

8 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters

9 www.fairchildsemi.com FCP16N60 / FCPF16N60 Rev. A FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) (7.00) (0.70) MAX1.47 (30 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 TO-220F Dimensions in Millimeters

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