FCP104N60F FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • 650 V @ T J = 150°C
  • T y p . RDS(on) = 91 mΩ
  • Ultra Low Gate Charge (Typ. Q g = 110 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = 313 pF)
  • 100% Avalanche Tested

Applications

  • Lighting
  • Solar Inverter
  • AC-DC Power Supply

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for ou tstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss , provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET ® II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCP104N60F Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1Hz) ±30 V ID Drain Current - Continuous (TC = 25oC) 37 A- Continuous (TC = 100oC) 24 IDM Drain Current - Pulsed (Note 1) 114 A EAS Single Pulsed Avalanche Energy (Note 2) 809 mJ IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/nsMOSFET dv/dt 100 PD Power Dissipation (TC = 25oC) 357 W - Derate Above 25oC2 . 8 5 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP104N60F Unit RθJC Thermal Resistance, Junction to Case, Max. 0.35 oC/W RθJA Thermal Resistance, Junction to Ambient ,Max. 62.5 TO-220 GDS G S D

FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP104N60F FCP104N60F TO220 Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25oC 600 - - VVGS = 0 V, ID = 10 mA, TJ = 150oC 650 - - ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC- 0 . 6 7 - V / oC BVDS Drain-Source Avlanche Breakdown Volt- age VGS = 0 V, ID = 18.5 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0 V - - 10 μAVDS = 480 V, TC = 125oC- 1 6 - IGSS Gate to Body Leakage Current V GS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA3 - 5 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 18.5 A - 91 104 m Ω gFS Forward Transconductance V DS = 20 V, ID = 18.5 A - 33 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V f = 1 MHz - 4610 6130 pF Coss Output Capacitance - 3255 4330 pF Crss Reverse Transfer Capacitance - 155 235 pF Coss Output Capacitance V DS = 380 V, VGS = 0 V, f = 1 MHz - 74 - pF Coss eff. Effective Output Capacitance V DS = 0 V to 480 V, VGS = 0 V - 313 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 18.5 A VGS = 10 V (Note 4) - 110 145 nC Qgs Gate to Source Gate Charge - 24 - nC Qgd Gate to Drain “Miller” Charge - 44 - nC ESR Equivalent Series Resistance Drain open 0.9 Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 18.5 A VGS = 10 V, RGEN = 4.7 Ω (Note 4) -3 4 7 8 n s tr Turn-On Rise Time - 20 50 ns td(off) Turn-Off Delay Time - 102 214 ns tf Turn-Off Fall Time - 5.7 21.4 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 114 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 18.5 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 18.5 A dIF/dt = 100 A/μs - 144 - ns Qrr Reverse Recovery Charge - 0.91 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6.8 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 16. TO-220, Molded, 3 Lead, Jedec Variation AB (Delta) ically the warranty therein, which covers Fairchild products. http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 .

FCP104N60F — SuperFET® II FRFET® MOSFET ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 www.fairchildsemi.com8 LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or fr om Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. Fairchild will not provide any wa rranty coverage or other assistance for parts bought from Unau thorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I73 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PR ODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CO NVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIR CHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. tm