FCMT099N65S3 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FCMT099N65S3 — N-Channel SuperFET® III MOSFET www.onsemi.com Semiconductor Components Industries, LLC, 2017 Publi cation Order Number: May, 2017, Rev. 1.0 FCMT099N65S3/D FCMT099N65S3 N-Channel SuperFET ® III MOSFET

650 V, 30 A, 99 m Ω

Features

  • 700 V @ T J = 150 oC
  • Typ. R DS(on) = 87 m Ω
  • Ultra Low Gate Charge (Typ. Q g = 56 nC)
  • Low Effective Output Capacitance (Typ. C oss(eff.) = TBD pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

  • Server and Telecom Power Supplies
  • Solar Inverters
  • Adaptors

Description

SuperFET ® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-re sistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switc hing perfor- mance, dv/dt rate and higher avalanche energy. Cons equently, SuperFET III MOSFET is very suitable for the switch ing power applications such as server/telecom power, adaptor and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm 2). SuperFET III MOSFET in a Power88 package offers ex cellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offe rs Mois- ture Sensitivity Level 1 (MSL 1). Absolute Maximum Ratings TC = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCMT099N65S3 Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage - DC ±30 V - AC (f > 1 Hz) ±30 ID Drain Current - Continuous (T C = 25 oC) 30 A - Continuous (T C = 100 oC) 19 IDM Drain Current - Pulsed (Note 1) 75 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ IAS Avalanche Current (Note 1) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (T C = 25 oC) 227 W - Derate Above 25 oC 1.82 W/ oC TJ, T STG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from C ase for 5 Seconds 300 oC Symbol Parameter FCMT099N65S3 Unit RθJC Thermal Resistance, Junction to Case, Max. 0.55 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 45 Power88 S1 G G S1 S2 D S1 : Driver Source S2 : Power Source

FCMT099N65S3 — N-Channel SuperFET® III MOSFET www.onsemi.com Package Marking and Ordering Information

Electrical Characteristics

TC = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Source-Drain Diode Characteristics Part Number Top Mark Package Reel Size Tape Width Quanti ty FCMT099N65S3 FCMT099N65S3 Power88 13” 13.3 mm 3000 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, I D = 1 mA, T J = 25 °C 650 - - V VGS = 0 V, I D = 1 mA, T J = 150 °C 700 - - V ΔBV DSS / ΔTJ Breakdown Voltage Temperature Coefficient I D = 1 mA, Referenced to 25 oC - 0.68 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 µAVDS = 520 V, TC = 125 oC - 2.77 - IGSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = V DS , I D = 3 mA 2.5 - 4.5 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, I D = 15 A - 87 99 m Ω gFS Forward Transconductance VDS = 20 V, I D = 15 A - 17 - S Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz - 2270 - pF Coss Output Capacitance - 50 - pF Coss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 500 - pF Coss(er.) Energy Related Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) - 56 - nC Qgs Gate to Source Gate Charge - 13 - nC Qgd Gate to Drain “Miller” Charge - 23 - nC ESR Equivalent Series Resistance f = 1 MHz - 0.5 - Ω td(on) Turn-On Delay Time VDD = 400 V, I D = 15 A, VGS = 10 V, R g = 4.7 Ω (Note 4) - 22 - ns tr Turn-On Rise Time - 20 - ns td(off) Turn-Off Delay Time - 58 - ns tf Turn-Off Fall Time - 5 - ns IS Maximum Continuous Source to Drain Diode Forward Cu rrent - - 30 A ISM Maximum Pulsed Source to Drain Diode Forward Curren t - - 75 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 15 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, I SD = 15 A, dI F/dt = 100 A/ µs - 352 - ns Qrr Reverse Recovery Charge - 6.5 - µC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 4.4 A, R G = 25 Ω , starting T J = 25 °C. 3. I SD ≤ 15 A, di/dt ≤ 200 A/ µs, V DD ≤ 400 V, starting T J = 25 °C. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FCMT099N65S3 — N-Channel SuperFET® III MOSFET www.onsemi.com Mechanical Dimensions ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or cir cuit, and specifically disclaims any and all liabil ity, including without limitation special, conseque ntial or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance wi th all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, inclu ding “Typicals” must be validated for each customer application by customer's technical experts. ON Se miconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold ON Semiconductor and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative © Semiconductor Components Industries, LLC