FCI2302 FCI | Alldatasheet
Document overview
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Technical content
DESCRIPTION
Our FCI2302 N-Channel High-Density Trench MOSFETs utilize advanced processing techniques to achieve extremely low on-resistanc e per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of our products provides the designer with an extremely efficient and reliable device for use in a variety of applications.
FEATURES
- Super high dense cell trench design for low RDS(on)
- N-Channel Trench MOSFET
- SOT-23-3L Footprint
- Available in Tape and Reel
- Rugged and Reliable V DSS = 20V RDS(on) = 85mΩ (max.) @ VGS = 4.5V (ID = 3.6A) RDS(on) = 115mΩ (max.) @ VGS = 2.5V (ID = 3.1A) ABSOLUTE MAXIMUM RATINGS (TA = 25 o C unless otherwise specified) Characteristic Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current @ TA = 25oC I D 2.8 Pulsed Drain Current IDM 10 A Maximum Power Dissipation P D 1.25 W Drain-Source Diode Forward Current I S 1.6 A Gate-to-Source Voltage VGS ± 8 V Junction and Storage Temperature Range TJ, TSTG -55 to + 150 oC THERMAL RESISTANCE Characteristic Symbol Value Unit Junction-to-Ambient Thermal Resistance RθJA 85 oC/W Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%. FCI2302 N-Channel High-Density Trench MOSFET
ELECTRICAL CHARACTERISTICS (T A = 25oC unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = 250µA 20 V Zero Gate Voltage Drain Current I DSS V DS = 16V, VGS = 0V 1 µA Gate-Body Leakage I GSS V GS = 8V, VDS = 0V 100 nA ON CHARACETERISTICS Gate Threshold Voltage V GS(th) V DS = VGS, ID = 250µA 0.7 V VGS = 4.5V, ID = -2.8A 85 m Ω Drain-Source On-State Resistance R DS(on) VGS = 2.5V, ID = -2.0A 115 m Ω DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage V SD V GS = 0V, IS = 1.0A 1.0 V SWITCHING CHARACTERISTICS Total Gate Charge Q g 6.52 nC Gate-Source Charge Q gs 1.6 nC Gate-Drain Charge Q gd VDS = 10V, ID = 1A VGS = 4.5V 1.16 nC SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 12 ns Rise Time t r 36 ns Turn-Off Delay Time t D(OFF) 34 ns Fall Time t f VDD = 10V, ID = 1A VGEN = 4.5V RL = 10 ohms RGEN = 10 ohms 10 ns Notes: 2. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production testing. FCI2302 N-Channel High-Density Trench MOSFET
RATINGS AND CHARACTERISTIC CURVES FCI2302 N-Channel High-Density Trench MOSFET
FCI2302 N-Channel High-Density Trench MOSFET
FCI2302 N-Channel High-Density Trench MOSFET MARKING SPECIFICATIONS S22 Marking Guide: S22 = FCI2302 SOT-23 Package