FCH104N60F-F085 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: ON Semiconductor
  • PDF pages: 10

Technical content

Features

  • Typical RDS(on) = 91 m/C0087 at VGS = 10 V , ID = 18.5 A
  • Typical Qg(tot) = 109 nC at VGS = 10 V , ID = 18.5 A
  • UIS Capability
  • Qualified to AEC Q101 and PPAP Capable
  • This Device is Pb−Free and is RoHS Compliant

Applications

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV TO−247 CASE 340CK See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com D S G VDSS RDS(ON) MAX I D MAX

600 V 104 m/C0087 37 A

G D S MARKING DIAGRAM $Y&Z&3&K FCH 104N60F $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH104N60F = Specific Device Code

FCH104N60F−F085 www.onsemi.com MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 600 V VGS Gate to Source Voltage ±20 V ID Drain Current − Continuous (VGS = 10) (Note 1) T C = 25°C TC = 100°C A Pulsed Drain Current See Fig. 4 EAS Single Pulsed Avalanche Rating (Note 2) 809 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Power Dissipation 357 W Derate Above 25°C 2.85 W/°C TJ, TSTG Operating and Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T J = 25°C, L = 35 mH, IAS = 6.8 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. 3. I SD ≤ 18.5 A, di/dt ≤ 200 A//C0109s, VDD ≤ 380 V, starting TJ = 25°C. 4. R /C0113JA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R /C0113JC is guaranteed by design, while R /C0113JA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R/C0113JC Maximum Thermal Resistance, Junction to Case 0.35 /C0095C/W R/C0113JA Maximum Thermal Resistance, Junction to Ambient 40 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FCH104N60F−F085 FCH104N60F TO−247 − − 30

FCH104N60F−F085 www.onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 250 /C0109A 600 − − V IDSS Drain to Source Leakage Current VDS = 600 V, VGS =0V , TJ =2 5/C0095C − − 10 /C0109A VDS = 600 V, VGS = 0 V, TJ = 150/C0095C (Note 5) − − 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS =V DS, ID = 250 /C0109A 3 4 5 V rDS(on) Drain to Source On Resistance VGS =1 0V , ID = 18.5 A, TJ =2 5/C0095C − 91 104 m/C0087 VGS =1 0V , ID = 18.5 A, TJ = 150/C0095C (Note 5) − 217 275 m/C0087 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 100 V, VGS = 0 V, f = 1 MHz − 4302 − pF Coss Output Capacitance − 134 − pF Crss Reverse Transfer Capacitance − 1.7 − pF Rg Gate Resistance f = 1 MHz − 0.49 − /C0087 Qg(TOT) Total Gate Charge VDD = 380 V, ID = 18.5 A, VGS =1 0V − 109 139 nC Qg(th) Threshold Gate Charge − 8 11 nC Qgs Gate to Source Gate Charge − 23 − nC Qgd Gate to Drain “Miller” Charge − 46 − nC SWITCHING CHARACTERISTICS ton Turn-On Time VDD = 380 V, ID = 18.5 A, VGS =1 0V , RG = 4.7 /C0087 − 58 78 ns td(on) Turn-On Delay Time − 35 − ns tr Rise Time − 23 − ns td(off) Turn-Off Delay Time − 94 − ns tf Fall Time − 5 − ns toff Turn-Off Time − 98 131 ns DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Voltage ISD = 18.5 A, VGS = 0 V − − 1.2 V Trr Reverse Recovery Time IF = 18.5 A, dISD/dt = 100 A//C0109s VDD = 480 V − 162 − ns Qrr Reverse Recovery Charge − 1223 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. The maximum value is specified by design at T J = 150°C. Product is not tested to this condition in production.

Figure 5. Forward Bias Safe Operating Area Figure 6. Transfer Characteristics Figure 7. Forward Diode Characteristics Figure 8. Forward Diode Characteristics Figure 9. Saturation Characteristics Figure 10. RDSON vs. Gate Voltage

15 V Top

5 V Bottom

Figure 17. Gate Charge Test Circuit & Waveform Figure 18. Resistive Switching Test Circuit & Waveforms Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms

2 LIAS

Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms

TO−247−3LD SHORT LEAD CASE 340CK ISSUE A DATE 31 JAN 2019 XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX E D (3X) b (2X) b2 (2X) e Q L

0.25 M BA M

A A c B S P 213 2 DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82 D1 13.08 ~ ~ D2 0.51 0.93 1.35 E 15.37 15.62 15.87 E1 12.81 ~ ~ E2 4.96 5.08 5.20 e ~ 5.56 ~ L 15.75 16.00 16.25 L1 3.69 3.81 3.93 P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13851GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−247−3LD SHORT LEAD © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative