DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

„ Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A „ UIS Capability „ Qualified to AEC Q101 „ RoHS Compliant

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Application „ Automotive On Board Charger „ Automotive DC/DC converter for HEV Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 650 V VGS Gate to Source Voltage ±20 V ID Drain Current - Continuous (VGS=10) (Note 1) 54 A Pulsed Drain Current See Fig 4 A EAS Single Pulse Avalanche Rating (Note 2) 1128 mJ dv/dt MOSFET dv/dt 100 V/nsPeak Diode Recovery dv/dt (Note 3) 50 PD Power Dissipation 481 W Derate Above 25oC3 . 8 5 W / oC TJ, TSTG Operating and Storage Temperature -55 to + 150 oC RθJC M a x i m u m T h e r m a l R e s i s t a n c e J u n c t i o n t o C a s e 0 . 2 6 oC/W RθJA Maximum Thermal Resistance Junction to Ambient (Note 4) 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCH077N65F FCH077N65F_F085 TO-247 - - 30 D G S For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/package‐drawings/TO/ TO247A03.pdf Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 18.65mH, IAS = 11A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche. 3: ISD ≤ 27A, di/dt ≤ 200 A/us, VDD ≤ 380V, starting TJ = 25°C. 4: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design, while R θJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. G D S TO-247

FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET FCH077N65F_F085 Rev. B1 www.fairchildsemi.com2 Electrical Characteristics TJ = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage I D = 250μA, VGS = 0V 650 - - V IDSS Drain to Source Leakage Current VDS = 650V, TJ = 25oC - - 1 0 μA VGS = 0V T J = 150oC(Note 5) - - 1 mA IGSS Gate to Source Leakage Current V GS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage V GS = VDS, ID = 250μA 3.0 - 5.0 V rDS(on) Drain to Source On Resistance ID = 27A, VGS = 10V TJ = 25oC - 6 8 7 7 m Ω TJ = 150oC(Note 5) - 154 184 m Ω Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 5385 7162 pF Coss Output Capacitance - 5629 7486 pF Crss Reverse Transfer Capacitance - 194 - pF Coss(eff) Effective Output Capacitance V DS = 0V to 520V, VGS = 0V - 693 - pF Rg Gate Resistance f = 1MHz - 0.5 - Ω Qg(ToT) Total Gate Charge VDD = 380V ID = 27A VGS = 10V - 126 164 nC Qg(th) Threshold Gate Charge - 9 12 nC Qgs Gate to Source Gate Charge - 28 - nC Qgd Gate to Drain “Miller“ Charge - 53 - nC Switching Characteristics Drain-Source Diode Characteristics Notes: 5: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. ton Turn-On Time VDD = 380V, ID = 27A, VGS = 10V, RG = 4.7Ω - 64 148 ns td(on) Turn-On Delay Time - 37 - ns tr Rise Time - 27 - ns td(off) Turn-Off Delay Time - 105 - ns tf Fall Time - 5.3 - ns toff Turn-Off Time - 108.3 237 ns VSD Source to Drain Diode Voltage I SD = 27A, VGS = 0V - - 1.2 V Trr Reverse Recovery Time IF = 27A, dISD/dt = 100A/μs VDD = 520V - 190 - ns Qrr Reverse Recovery Charge - 1.5 - μC

Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Figure 21. TO-247, Molded, 3-Lead, Jedec Variation AB terms and conditions, specifically the warranty therein, which covers Fairchild products.

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. AccuPower™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or fr om Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. Fairchild will not provide any wa rranty coverage or other assistance for parts bought from Unau thorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I72 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PR ODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CO NVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIR CHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. tm FCH077N65F_F085 Rev. B1 www.fairchildsemi.com9