FCH041N60F FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on)= 36mΩ (Typ)
  • Ultra low gate charge (Typ. Q g=277nC)
  • Low effective output capacitance
  • 100% avalanche tested
  • R o H S C o m p l i a n t

Description

SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superio r switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G S G SD TO-247

FCH041N60F 600V N-Channel MOSFET, FRFET FCH041N60F Rev. C3 www.fairchildsemi.com2 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCH041N60F FCH041N60F TO-247 - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 10mA, VGS = 0V, TJ = 25oC 600 - - V ID = 10mA, VGS = 0V, TJ = 150oC 650 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25oC - 0.67 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 1 μAVDS = 480V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current V GS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250μA3 - 5 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 38A - 36 41 m Ω gFS Forward Transconductance VDS = 20V, ID = 38A (Note 4) - 64.5 - S Ciss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 10800 14365 pF Coss Output Capacitance - 324 430 pF Crss Reverse Transfer Capacitance - 4.5 - pF Coss Output Capacitance V DS = 380V, VGS = 0V, f = 1.0MHz - 185 - pF Coss eff. Effective Output Capacitance V DS = 0V to 480V, VGS = 0V - 748 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 38A VGS = 10V (Note 4) - 277 360 nC Qgs Gate to Source Gate Charge - 65.3 - nC Qgd Gate to Drain “Miller” Charge - 116 - nC ESR Equivalent Series Resistance f=1MHz - 1 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 38A RGEN = 4.7Ω (Note 4) - 63 136 ns tr Turn-On Rise Time - 66 142 ns td(off) Turn-Off Delay Time - 244 498 ns tf Turn-Off Fall Time - 53 116 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 77 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 231 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 38A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 38A dIF/dt = 100A/μs (Note 4) - 190 - ns Qrr Reverse Recovery Charge - 1490 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 38A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

Figure 12. Transient Thermal Response Curve

FCH041N60F 600V N-Channel MOSFET, FRFET FCH041N60F Rev. C3 www.fairchildsemi.com6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCH041N60F 600V N-Channel MOSFET, FRFET FCH041N60F Rev. C3 www.fairchildsemi.com7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

FCH041N60F 600V N-Channel MOSFET, FRFET FCH041N60F Rev. C3 www.fairchildsemi.com8 Mechanical Dimensions TO-247

FCH041N60F 600V N-Channel MOSFET, FRFET FCH041N60F Rev. C3 www.fairchildsemi.com9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WI THOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms 2Cool™ AccuPower™ AX-CAP™* BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter ® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green Bridge™ Green FPS™ Green FPS™ e-Series™ G max™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. 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