FCH023N65S3L4 ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 m/C0087
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar TO−247−4LD CASE 340CJ See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION
www.onsemi.com $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCH023N65S3L4 = Specific Device Code MARKING DIAGRAM VDSS RDS(ON) MAX I D MAX
650 V 23 m/C0087 @ 10 V 75 A
D G S2S1 $Y&Z&3&K FCH023N65 S3L4 D G POWER MOSFET S1: Driver Source S2: Power Source
www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage − DC ±30 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 75 A − Continuous (TC = 100°C) 65.8 IDM Drain Current − Pulsed (Note 1) 300 A EAS Single Pulsed Avalanche Energy (Note 2) 2025 mJ IAS Avalanche Current (Note 2) 15 A EAR Repetitive Avalanche Energy (Note 1) 5.95 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 595 W − Derate Above 25°C 4.76 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I AS = 15 A, RG = 25 /C0087, starting TJ = 25°C. 3. I SD ≤ 37.5 A, di/dt ≤ 200 A//C0109s, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R/C0113JC Thermal Resistance, Junction to Case, Max. 0.21 /C0095C/W R/C0113JA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH023N65S3L4 FCH023N65S3L4 TO−247 A04 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 1 mA, TJ =2 5/C0095C 650 − − V VGS =0V , ID = 1 mA, TJ = 150/C0095C 700 − − V /C0068BVDSS / /C0068TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25/C0095C − 0.72 − V//C0095C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 1 /C0109A VDS = 520 V, TC = 125/C0095C − 6.8 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =0V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =V DS, ID = 3.0 mA 2.5 − 4.5 V RDS(on) Static Drain to Source On Resistance VGS =1 0V , ID = 37.5 A − 19.5 23 m/C0087 gFS Forward Transconductance VDS =2 0V , ID = 37.5 A − 66 − S
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Essentially independent of operating temperature typical characteristics.
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
TO−247−4LD CASE 340CJ ISSUE A DATE 16 SEP 2019 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13852GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−247−4LD © Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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