FCCM60120B FS | Alldatasheet
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Technical content
2022.05.25 Revision No : 0 1/5
Absolute Maximum Ratings TC = 25°C unless otherwisenoted
Applications
- Switch Mode Power Supplies - Solar Inverters - DC/DC Converters - Battery Chargers - Motor Drives - Induction Heating FCCM60120B 1,200V 60A 40mΩ Silicon Carbide MOSFET Features Package Outline - Low On-Resistance - High-Speed Switching - High-Frequency Operation - Fast Reverse Recovery - Easy to Parallel & Simple to Drive - Halogen Free, RoHS Compliant Gate Drain Source Symbol Parameter Value Units VDSS Drain-Source Voltage 1200 V ID Drain Current - Continuous (TC = 25℃) 60 A - Continuous (TC = 100℃) 48 A IDM Drain Current - Pulsed 120 A VGSS_surge Gate-Source Voltage (t_surge < 300ns) -7 / +24 V VGSS Gate-Source Voltage (DC) -5 / +20 V PD Power Dissipation (TC = 25℃) 246 W - Derate above 25℃ 1.64 W/℃ TJ, TSTG Operating and Storage TemperatureRange -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 260 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance,Junction-to-Case 0.61 ℃/W RθJA Thermal Resistance,Junction-to-Ambient 40 ℃/W TO-247-3
Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source BreakdownVoltage VGS = 0 V, ID = 250 uA 1200 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 1200 V, VGS = 0 V -- -- 200 uA IGSS Gate-Body LeakageCurrent VGS = 20 V, VDS = 0 V -- -- 250 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 2.5 mA 1.5 -- 4.0 V RDS(on) Static Drain-Source On- Resistance VGS = 20 V, ID = 20 A -- 40 55 mΩ Dynamic Characteristics Ciss Input Capacitance VDS = 800 V, VGS = 0 V, f =
1.0 MHz
-- 2824 -- pF Coss Output Capacitance -- 160 -- pF Crss Reverse Transfer Capacitance -- 40 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 800 V, VGS = -5 / 20 V, ID = 20 A, RL = 30 Ω, RG = 4.7Ω -- 25 -- ns tr Turn-On Rise Time -- 29 -- td(off) Turn-Off Delay Time -- 57 -- tf Turn-Off Fall Time -- 19 -- Eon Turn-On Switching loss VDD = 800 V, VGS = -5 / 20 V L = 0.3 mH. RG = 4.7Ω -- 156 -- uJ Eoff Turn-Off Switching loss -- 102 -- Qg Total Gate Charge VDS = 800 V, ID = 20 A, VGS = -5 / 20V -- 195 -- nCQgs Gate-Source Charge -- 23 -- Qgd Gate-Drain Charge -- 83 -- Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 60 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 120 A VSD Diode Forward Voltage VGS = 0 V, IS = 20 A -- 3.5 -- V trr Reverse Recovery Time VR = 800 V, VGS = -5 / 20 V, IS = 20 A, dIF / dt = 1000 A/us -- 56 -- ns Qrr Reverse Recovery Charge -- 230 -- nC