FCBS0550

FCBS0550 FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 16

Technical content

Features

• UL Certified No.E209204(SPM27-BA package)
• 500V-5A 3-phase MOSFET inverter bridge including control ICs for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• AC 200V three-phase inverter drive for small power ac motor drives
• Home appliances applicati ons like refrigerator. General Description It is an advanced smart power module (SPM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like refrigerator. It combines opti- mized circuit protection and dr ive matched to low-loss MOS- FETs. System reliability is fu rther enhanced by the integrated under-voltage lock-out and short- circuit protection. The high speed built-in HVIC provides opt o-coupler-less single-supply MOSFET gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided nega- tive dc terminals. Bottom ViewTop View 26.8mm 44mm Bottom ViewTop View 26.8mm 44mm Figure 1.

2 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Integrated Power Functions

• 500V-5A MOSFET inverter for three-phase DC/AC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions
• For inverter high-side MOSFETs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figs. 10 and 11.
• For inverter low-side MOSFETs: Gate dr ive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply), SC fault
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Figure 2. Top View (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) V B(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Temperature (T C) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) V CC(UH) (11) V B(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) V B(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Temperature (T C) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) V CC(UH) (11) V B(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) V B(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Temperature (T C) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) V CC(UH) (11) V B(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) V B(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Temperature (T C) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) V CC(UH) (11) V B(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 13.3 19.1

3 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Pin Descriptions Pin Number Pin Name Pin Description 1V CC(L) Low-side Common Bias Voltage for IC and MOSFETs Driving

2 COM Common Supply Ground

3I N (UL) Signal Input for Low-side U Phase 4I N (VL) Signal Input for Low-side V Phase 5I N (WL) Signal Input for Low-side W Phase 6V FO Fault Output 7C FOD Capacitor for Fault Output Duration Time Selection 8C SC Capacitor (Low-pass Filter) for Short-Current Detection Input 9I N (UH) Signal Input for High-side U Phase

10 V CC(UH) High-side Bias Voltage for U Phase IC

11 V B(U) High-side Bias Voltage for U Phase MOSFET Driving

12 V S(U) High-side Bias Voltage Ground for U Phase MOSFET Driving

13 IN (VH) Signal Input for High-side V Phase

14 V CC(VH) High-side Bias Voltage for V Phase IC

15 V B(V) High-side Bias Voltage for V Phase MOSFET Driving

16 V S(V) High-side Bias Voltage Ground for V Phase MOSFET Driving

17 IN (WH) Signal Input for High-side W Phase

18 V CC(WH) High-side Bias Voltage for W Phase IC

19 V B(W) High-side Bias Voltage for W Phase MOSFET Driving

20 V S(W) High-side Bias Voltage Ground for W Phase MOSFET Driving

21 N U Negative DC–Link Input for U Phase

22 N V Negative DC–Link Input for V Phase

23 N W Negative DC–Link Input for W Phase

24 U Output for U Phase

25 V Output for V Phase

26 W Output for W Phase

27 P Positive DC–Link Input

4 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Internal Equivalent Circuit and Input/Output Pins Note: 1. Inverter low-side is composed of three MOSFETs, and one control IC. It has gate driving and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three MOSFETs and three drive ICs for each MOSFET. Figure 3. COM VCC IN(UL) IN(VL) IN(WL) VFO C(FOD) C(SC) OUT(UL) OUT(VL) OUT(WL) NU (21) NV (22) NW (23) U (24) V (25) W (26) P (27) (20) VS(W) (19) VB(W) (16) VS(V) (15) VB(V) (8) CSC (7) CFOD (6) VFO (5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L) VCC VB OUT COM VSIN VB VS OUT IN COM VCC VCC VB OUT COM VSIN (18) VCC(WH) (17) IN(WH) (14) VCC(VH) (13) IN(VH) (12) VS(U) (11) VB(U) (10) VCC(UH) (9) IN(UH) VSL

5 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Inverter Part Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Total System Thermal Resistance Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Package Marking and Ordering Information Symbol Parameter Conditions Rating Units VPN Supply Voltage Applied between P- N U, NV, NW 400 V VPN(Surge) Supply Voltage (Surge) Applied between P- N U, NV, NW 450 V VDSS Drain-Source Voltage 500 V ± ID Each MOSFET Drain Current T C = 25°C, Peak Sinusoidal Current 5 A ± IDP Each MOSFET Drain Current (Peak) T C = 25°C, Under 1ms Pulse Width 7 A PC Collector Dissipation T C = 25°C per One Chip 25 W TJ Operating Junction Temperature (Note 1) -20 ~ 125 °C Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between V CC(UH), VCC(VH), VCC(WH), VCC(L) - COM 20 V VBS High-side Control Bias Volt- age Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL), IN(WL) - COM -0.3~17 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC+0.3 V IFO Fault Output Current Sink Current at V FO Pin 5 mA VSC Current Sensing Input Voltage Applied between C SC - COM -0.3~V CC+0.3 V Symbol Parameter Conditions Rating Units TSC Short Circuit Withstanding Time V CC = VBS = 13.5 ~ 16.5V, TJ =125°C, Non- repetitive, VPN=400V, RShunt=0mʃ 10 µs TC Module Case Operation Temperature -20 °C ≤ TJ ≤ 125°C, See Figure 2 -20 ~ 100 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoi dal, AC 1 minute, Connection Pins to ceramic substrate

2500 V rms

Symbol Parameter Conditions Min. Typ. Max. Units Rth(j-c) Junction to Case Thermal Resistance Inverter MOSFET part (per 1/6 module) - - 4 °C/W Device Marking Device Package Reel Size Tape Width Quantity FCBS0550 FCBS0550 SPM27BA - - 10

1. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.

For the detailed information, please see Figure 4. Figure 4. Switching Time Definition

7 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Units IQCCL Quiescent VCC Supply Current VCC = 15V IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA IQCCH VCC = 15V IN(UH, VH, WH) = 0V VCC(UH), VCC(VH), VCC(WH) - COM - - 100 µA IQBS Quiescent VBS Supply Current VBS = 15V IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) - - 500 µA VFOH Fault Output Voltage V SC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V VSC(ref) Short Circuit Trip Level V CC = 15V (Note 4) 0.45 0.5 0.55 V UVCCD Supply Circuit Under- Voltage Protection Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.2 V UVBSD Detection Level 10.1 11.3 12.5 V UVBSR Reset Level 10.5 11.7 12.9 V tFOD Fault-out Pulse Width C FOD = 33nF (Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN(VL), IN(WL) - COM 2.9 - - V VIN(OFF) OFF Threshold Voltage - - 0.8 V Symbol Parameter Conditions Value Units Min. Typ. Max. VPN Supply Voltage Applied between P - N U, NV, NW - 300 400 V VCC Control Supply Voltage Applied between V CC(UH), VCC(VH), VCC(WH), VCC(L) - COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between V B(U) - V S(U), V B(V) - V S(V), VB(W) - VS(W) 13.0 15 18.5 V dVCC/dt, dVBS/dt Control supply variation -1 - 1 V/ µs tdead Blanking Time for Preventing Arm-short For Each Input Signal 2 - - µs fPWM PWM Input Signal -20 °C ≤ TC ≤ 100°C, -20°C ≤ TJ ≤ 125°C - - 20 kHz VSEN Voltage for Current Sensing Applied between N U, NV, NW - COM (Including surge voltage) -4 4 V

Figure 5. Flatness Measurement Position

c1 : Normal operation: MOSFET ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard MOSFET gate interrupt. c6 : Input “L” : MOSFET OFF state. c7 : Input “H”: MOSFET ON state, but during the active period of fault output the MOSFET doesn’t turn ON. Figure 8. Short-Circuit Current Protection (Low-side Operation only)

1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s

nal voltage drop at input terminal.

1. The logic input is compatible with standard CMOS or LSTTL outputs.

Figure 9. Recommended CPU I/O Interface Circuit

1. It would be recommended that the bootstrap diode, D

BS, has soft and fast recovery characteristics.

1. The bootstrap resistor (RBS) should be 3 times greater than RE(H). The recommended value of RE(H) is 5.6Ω, but it can be increased up to 20Ω (maximum) for a slower dv/dt
2. The ceramic capacitor placed between V

CC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.

12 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor(C FOD) between CFOD(pin7) and COM(pin2). (Example : if C FOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2 µs. 9. Each capacitor should be mounted as close to the pins of the SPM as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&COM pins should be as short as possible . The use of a high frequency non-inductive capacitor of around 0.1~0.22µF between the P&COM pins is recommended. 11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12. CSPC15 should be over 1µF and mounted as close to the pins of the SPM as possible. Fig. 11. Typical Application Circuit Fault 15V line CBS CBSC RBS DBS RBS DBS CBS CBSC RBS DBS $41 $41$ CFOD 5V line RPF CBPF RS VdcCDCS Gating UH Gating VH Gating WH Gating WL Gating VL Gating UL CPF RFU RFV RFW RSU RSV RSW CFUCFVCFW W-Phase Current V-Phase Current U-Phase Current RF COM VCC IN(UL) IN(VL) IN(WL) VFO C(FOD) C(SC) OUT(UL) OUT(VL) OUT(WL) NU (21) NV (22) NW (23) U (24) V (25) W (26) P (27) (20) V S(W) (19) V B(W) (16) V S(V) (15) V B(V) (8) C SC (7) C FOD (6) V FO (5) IN (WL) (4) IN (VL) (3) IN (UL) (2) COM (1) V CC(L) VCC VB OUT COM VSIN VB VS OUT IN COM VCC VCC VB OUT COM VSIN (18) V CC(WH) (17) IN (WH) (14) V CC(VH) (13) IN (VH) (12) V S(U) (11) V B(U) (10) V CC(UH) (9) IN (UH) *OQVU4JHOBMGPS4IPSU $JSDVJU1SPUFDUJPO CSC RE(UH) VSL RE(VH) RE(WH)

13 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Detailed Package Outline Drawings

14 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Detailed Package Outline Drawings (Continued)

15 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) Detailed Package Outline Drawings (Continued)

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 16 www.fairchildsemi.com FCBS0550 Rev. A FCBS0550 Smart Power Module (SPM) DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELI ABILITY, FUNCTION OR DESIGN. FAI RCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PR ODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This data sheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ Rev. I15