DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • R DS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
  • Ultra low gate charge (Typ. Qg = 86 nC)
  • Low effective output capacitance (Typ. C oss.eff = 361 pF)
  • 100% avalanche tested
  • RoHS compliant

Applications

  • Solar Inverter
  • AC-DC Power Supply

Description

The SupreMOS® MOSFET is Fairchild Semiconductor ®’s next- generation of high voltage super-junction (SJ) technology employing a deep trench filling proc ess that differentiate it from the conventional MOSFETs. This advanced technology and pre- cise process control provide lo west Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applica- tions such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S D SG MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCB36N60N Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 36 A-Continuous (TC = 100oC) 22.7 IDM Drain Current - Pulsed (Note 1) 108 A EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current 12 A EAR Repetitive Avalanche Energy 3.12 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (TC = 25oC) 312 W - Derate above 25oC2 . 6 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCB36N60N Unit RθJC Thermal Resistance, Junction to Case 0.4 oC/WRθJA* Thermal Resistance, Junction to Ambient * 40 RθJA Thermal Resistance, Junction to Ambient 62.5 *Drain current limited by maximum junction temperature *When mounted on the minmium pad size recommended (PCB Mount)

FCB36N60N N-Channel MOSFET www.fairchildsemi.com2©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Package Marking and Ordering Information Electrical Characteristics TC = 25oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCB36N60N FCB36N60N D 2-PAK 330mm 24mm 800 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage I D = 1 mA, VGS = 0 V, TC = 25oC 600 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC- 0 . 7 - V / oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μAVDS = 480 V, VGS = 0 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250 μA2 . 0 - 4 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10 V, ID = 18 A - 81 90 m Ω gFS Forward Transconductance V DS = 40 V, ID = 18 A - 41 - S Ciss Input Capacitance VDS = 100 V, VGS = 0 V f = 1 MHz - 3595 4785 pF Coss Output Capacitance - 149 200 pF Crss Reverse Transfer Capacitance - 4 6 pF Coss Output Capacitance V DS = 380 V, VGS = 0 V, f = 1 MHz - 80 - pF Cosseff. Effective Output Capacitance V DS = 0 V to 380 V, VGS = 0 V - 361 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 18 A, VGS = 10 V (Note 4) - 86 112 nC Qgs Gate to Source Gate Charge - 15.4 - nC Qgd Gate to Drain “Miller” Charge - 26.4 - nC ESR Equivalent Series Resistance (G-S) Drain Open - 1 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 18 A RG = 4.7 Ω (Note 4) -2 3 5 6 n s tr Turn-On Rise Time - 22 54 ns td(off) Turn-Off Delay Time - 94 198 ns tf Turn-Off Fall Time - 4 18 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage V GS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 18 A dIF/dt = 100 A/μs - 574 - ns Qrr Reverse Recovery Charge 10 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCB36N60N N-Channel MOSFET www.fairchildsemi.com5©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCB36N60N N-Channel MOSFET www.fairchildsemi.com6©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

FCB36N60N N-Channel MOSFET www.fairchildsemi.com7©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Mechanical Dimensions D2PAK

FCB36N60N N-Channel MOSFET www.fairchildsemi.com8©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF TH E APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WO RLDWIDE TERMS AND CONDITIONS , SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms 2Cool™ AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET Global Power ResourceSM Green Bridge™ Green FPS™ Green FPS™ e-Series™ G max™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Datasheet Identification Product Status Definition Advance Information For mative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-C ounterfeiting Policy. Fairchild’s Anti-Count erfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Product s customers buy either from Fairchild directly or fr om Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev. I64 tm