FCB20N60F FAIRCHILD | Alldatasheet
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Technical content
Features
650V @ TJ = 150°C Typ. Rds(on)=0.15: Fast Recovery Type ( trr = 160ns ) Ultra low gate charge (typ. Qg=75nC) Low effective output capacitance (typ. Coss.eff=165pF) 100% avalanche tested
Description
SuperFETTM is, Farichilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. G S D D G S Absolute Maximum Ratings Symbol Parameter FCB20N60F Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25qC) - Continuous (TC = 100qC) 12.5 A A IDM Drain Current - Pulsed (Note 1) 60 A VGSS Gate-Source voltage r 30 V EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25qC) - Derate above 25qC 208 1.67 W W/qC TJ, TSTG Operating and Storage Temperature Range -55 to +150 qC TL Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 qC Thermal Characteristics Symbol Parameter FCB20N60F Unit RTJC Thermal Resistance, Junction-to-Case 0.6 qC/W RTJA* Thermal Resistance, Junction-to-Ambient* 40 qC/W RTJA Thermal Resistance, Junction-to-Ambient 62.5 qC/W * When mounted on the minimum pad size recommended (PCB Mount)
2 www.fairchildsemi.comFCB20N60F Rev. A2 FCB20N60F 600V N-CHANNEL FRFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape W idth Quantity FCB20N60F FCB20N60FTM D2-Pak 330mm 24m 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250PA, TJ = 25qC 600 -- -- V VGS = 0V, ID = 250PA, TJ = 150qC -- 650 -- V 'BVDSS / 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, Referenced to 25qC -- 0.6 -- V/qC BVDSS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125qC 100 PA PA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250PA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 : gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF Coss Output Capacitance -- 1280 1665 pF Crss Reverse Transfer Capacitance -- 95 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, ID = 20A RG = 25: (Note 4, 5) -- 62 135 ns tr Turn-On Rise Time -- 140 290 ns td(off) Turn-Off Delay Time -- 230 470 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC Qgs Gate-Source Charge -- 13.5 18 nC Qgd Gate-Drain Charge -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 20A dIF/dt =100A/Ps (Note 4) -- 160 -- ns Qrr Reverse Recovery Charge -- 1.1 -- PC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25:, Starting TJ = 25qC 3. ISD d 20A, di/dt d1200A/Ps, VDD d BVDSS, Starting TJ = 25qC 4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
5 www.fairchildsemi.comFCB20N60F Rev. A2 FCB20N60F 600V N-CHANNEL FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms
6 www.fairchildsemi.comFCB20N60F Rev. A2 FCB20N60F 600V N-CHANNEL FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms
7 www.fairchildsemi.comFCB20N60F Rev. A2 FCB20N60F 600V N-CHANNEL FRFET Mechanical Dimensions 10.00 r0.2 0 10.00 r0.2 0 (8 .00) (4 .4 0) 1.2 7 r0.10 0.8 0 r0.10 0.8 0 r0.10 (2 X R 0.4 5 ) 9 .9 0 r0.2 0 4 .5 0 r0.2 0 0.10 r0.15 2 .4 0 r0.2 0 2 .5 4 r0.3 0 15 .3 0 r0.3 0 9 .2 0 r0.2 0 4 .9 0 r0.2 0 1.4 0 r0.2 0 2 .00 r0.10 (0.7 5 ) (1.7 5 ) (7 .2 0) 0q~3q 1.2 0 r0.2 0 9 .2 0 r0.2 0 15 .3 0 r0.3 0 4 .9 0 r0.2 0 (0.4 0) 2 .5 4 T Y P 2 .5 4 T Y P 1.3 0 + 0.10 0.05 0.5 0 + 0.10 0.05 D2PAK Dimensions in Millimeters
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