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Document overview

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Technical content

Features

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 105 m/C0087
  • Ultra Low Gate Charge (Typ. Qg = 46 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • UPS / Solar See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com VDSS RDS(ON) MAX I D MAX

650 V 125 m/C0087 @ 10 V 24 A

D S G D2−PAK CASE 418AJ $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCB125N65S3 = Specific Device Code MARKING DIAGRAM G S D $Y&Z&3&K FCB 125N65S3

www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage − DC ±30 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 24 A − Continuous (TC = 100°C) 15 IDM Drain Current − Pulsed (Note 1) 60 A EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ IAS Avalanche Current (Note 2) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 1.81 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 181 W − Derate Above 25°C 1.45 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse −width limited by maximum junction temperature. 2. I AS = 3.7 A, RG = 25 /C0087, starting TJ = 25°C. 3. I SD ≤ 12 A, di/dt ≤ 200 A//C0109s, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R/C0113JC Thermal Resistance, Junction to Case, Max. 0.69 /C0095C/W R/C0113JA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCB125N65S3 FCB125N65S3 D2−PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

www.onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 1 mA, TJ =2 5/C0095C 650 V VGS =0V , ID = 1 mA, TJ = 150/C0095C 700 V /C0068BVDSS / /C0068TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25/C0095C 0.68 V//C0095C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V 1 /C0109A VDS = 520 V, TC = 125/C0095C 1.35 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =0V ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =V DS, ID = 0.59 mA 2.5 4.5 V RDS(on) Static Drain to Source On Resistance VGS =1 0V , ID =1 2A 105 125 m/C0087 gFS Forward Transconductance VDS =2 0V , ID =1 2A 16 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz 1940 pF Coss Output Capacitance 40 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V 439 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V 62 pF Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 12 A, VGS =1 0V (Note 4) 46 nC Qgs Gate to Source Gate Charge 12 nC Qgd Gate to Drain “Miller” Charge 19 nC ESR Equivalent Series Resistance f = 1 MHz 4 /C0087 SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time VDD = 400 V, ID = 12 A, VGS =1 0V , Rg = 4.7 /C0087 (Note 4) 25 ns tr Turn-On Rise Time 26 ns td(off) Turn-Off Delay Time 73 ns tf Turn-Off Fall Time 17 ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current 60 A VSD Source to Drain Diode Forward Voltage VGS = 0V , ISD = 1 2A 1.2 V trr Reverse Recovery Time VDD = 400 V, ISD = 1 2A , dIF/dt = 100 A//C0109s 339 ns Qrr Reverse Recovery Charge 5.7 /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.onsemi.com PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE E ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 FCB125N65S3/D SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative