FCB099N65S3 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 79 m/C0087
  • Ultra Low Gate Charge (Typ. Qg = 61 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF)
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • UPS / Solar See detailed ordering, marking and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com VDSS RDS(ON) MAX I D MAX

650 V 99 m/C0087 @ 10 V 30 A

D S G D2−PAK CASE 418AJ $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCB099N65S3 = Specific Device Code MARKING DIAGRAM G S D $Y&Z&3&K FCB 099N65S3

www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage − DC ±30 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 30 A − Continuous (TC = 100°C) 19 IDM Drain Current − Pulsed (Note 1) 75 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ IAS Avalanche Current (Note 2) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 227 W − Derate Above 25°C 1.82 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse −width limited by maximum junction temperature. 2. I AS = 4.4 A, RG = 25 /C0087, starting TJ = 25°C. 3. I SD ≤ 15 A, di/dt ≤ 200 A//C0109s, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R/C0113JC Thermal Resistance, Junction to Case, Max. 0.55 /C0095C/W R/C0113JA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCB099N65S3 FCB099N65S3 D2−PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

www.onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V , ID = 1 mA, TJ =2 5/C0095C 650 V VGS =0V , ID = 1 mA, TJ = 150/C0095C 700 V /C0068BVDSS / /C0068TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25/C0095C 0.68 V//C0095C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V 1 /C0109A VDS = 520 V, TC = 125/C0095C 1.4 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =0V ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =V DS, ID = 0.74 mA 2.5 4.5 V RDS(on) Static Drain to Source On Resistance VGS =1 0V , ID =1 5A 79 99 m/C0087 gFS Forward Transconductance VDS =2 0V , ID =1 5A 19 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz 2480 pF Coss Output Capacitance 55 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V 544 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V 78 pF Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS =1 0V (Note 4) 61 nC Qgs Gate to Source Gate Charge 15 nC Qgd Gate to Drain “Miller” Charge 25 nC ESR Equivalent Series Resistance f = 1 MHz 0.4 /C0087 SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time VDD = 400 V, ID = 15 A, VGS =1 0V , Rg = 4.7 /C0087 (Note 4) 23 ns tr Turn-On Rise Time 24 ns td(off) Turn-Off Delay Time 60 ns tf Turn-Off Fall Time 5 ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current 75 A VSD Source to Drain Diode Forward Voltage VGS = 0V , ISD = 1 5A 1.2 V trr Reverse Recovery Time VDD = 400 V, ISD = 15 A, dIF/dt = 100 A//C0109s 408 ns Qrr Reverse Recovery Charge 8.4 /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics.

Figure 12. Transient Thermal Response Curve

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F DATE 11 MAR 2021SCALE 1:1 XX XXXXXXXXX AWLYWWG GENERIC MARKING DIAGRAMS* XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb −Free Package AKA = Polarity Indicator IC Standard XXXXXXXXG AYWW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. Some products may not follow the Generic Marking. Rectifier AYWW XXXXXXXXG AKA SSG XXXXXX XXYMW MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON56370EDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1D2PAK−3 (TO−263, 3−LEAD) © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative