FCA76N60N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A
  • Ultra Low Gate Charge ( Typ. Qg = 218nC)
  • Low Effective Output Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By util izing this advanced te chnology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. GSD TO-3PN D G S D MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 76 A-Continuous (TC = 100oC) 48.1 IDM Drain Current -Pulsed (Note 1) 228 A EAS Single Pulsed Avalanche Energy (Note 2) 8022 mJ IAR Avalanche Current 25.3 A EAR Repetitive Avalanche Energy 5.43 mJ dv/dt MOSFET dv/dt Ruggedness (Note 3) 100 V/nsPeak Diode Recovery dv/dt 20 PD Power Dissipation (TC = 25oC) 543 W -Derate above 25oC4 . 3 4 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.23 oC/WRθJS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient 40 *Drain current limited by maximum junction temperature

FCA76N60N N-Channel MOSFET FCA76N60N Rev. A www.fairchildsemi.com2 Package Marking and Ordering Information TC = 25oC unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCA76N60N FCA76N60N TO-3PN - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage I D = 1mA, VGS = 0V,TJ = 25oC6 0 0 -- V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25oC - 0.73 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μAVDS = 480V, TJ = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250μA 2.0 - 4.0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 38A - 28 36 m Ω gFS Forward Transconductance V DS = 40V, ID = 38A - 88 - S Ciss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 9310 12385 pF Coss Output Capacitance - 370 495 pF Crss Reverse Transfer Capacitance - 3.1 5.0 pF Coss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 196 - pF Cosseff. Effective Output Capacitance V DS = 0V to 380V, VGS = 0V - 914 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 38A, VGS = 10V (Note 4) - 218 285 nC Qgs Gate to Source Gate Charge - 39 - nC Qgd Gate to Drain “Miller” Charge - 66 - nC ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1.0 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 38A RG = 4.7Ω (Note 4) -3 4 7 8 n s tr Turn-On Rise Time - 24 58 ns td(off) Turn-Off Delay Time - 235 480 ns tf Turn-Off Fall Time - 32 74 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 38A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 38A dIF/dt = 100A/μs - 613 - ns Qrr Reverse Recovery Charge - 16 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 76A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCA76N60N N-Channel MOSFET FCA76N60N Rev. A www.fairchildsemi.com5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCA76N60N N-Channel MOSFET FCA76N60N Rev. A www.fairchildsemi.com6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G

  • I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e Dr op V SD I FM , Body D i ode For w ar d Cur r ent Body D i ode Rever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Type as D U T V GS • dv/ dt cont r ol l ed by R G
  • I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e Dr op V SD I FM , Body D i ode For w ar d Cur r ent Body D i ode Rever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G at e Pul se W i dt h

FCA76N60N N-Channel MOSFET FCA76N60N Rev. A www.fairchildsemi.com7 Mechanical Dimensions TO-3PN Dimensions in Millimeters

FCA76N60N N-Channel MOSFET FCA76N60N Rev. A www.fairchildsemi.com8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WO RLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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