FCA36N60NF FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • R DS(on) = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A
  • Ultra Low Gate Charge ( Typ. Qg = 86nC)
  • Low Effective Output Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this adv anced technology and precise pro- cess control, SupreMOS provi des world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.D G S GSD TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCA36N60NF Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current Continuous (TC = 25oC) 34.9 AContinuous (TC = 100oC) 22 IDM Drain Current Pulsed (Note 1) 104.7 A EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current 12 A EAR Repetitive Avalanche Energy 3.12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/nsMOSFET dv/dt Ruggedness 100 PD Power Dissipation (TC = 25oC) 312 W Derate above 25oC2 . 6 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCA36N60NF Units RθJC Thermal Resistance, Junction to Case 0.40 oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient 40 *Drain current limited by maximum junction temperature

FCA36N60NF N-Channel MOSFET, FRFET FCA36N60NF Rev. A www.fairchildsemi.com2 Package Marking and Ordering Information TC = 25oC unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCA36N60NF FCA36N60NF TO-3PN - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage I D = 1mA, VGS = 0V,TJ = 25oC6 0 0 -- V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25oC - 0.60 - V/ oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μATJ = 125oC - - 100 IGSS Gate to Body Leakage Current V GS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250μA 3.0 3.7 5.0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 18A - 80 95 m Ω gFS Forward Transconductance V DS = 20V, ID = 18A - 39 - S Ciss Input Capacitance VDS = 100V, VGS = 0V f = 1MHz - 3191 4245 pF Coss Output Capacitance - 145 195 pF Crss Reverse Transfer Capacitance - 5 8 pF Coss Output Capacitance V DS = 380V, VGS = 0V, f = 1MHz - 81 - pF Cosseff. Effective Output Capacitance V DS = 0V to 480V, VGS = 0V - 338 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 18A, VGS = 10V (Note 4) -8 6 1 1 2 n C Qgs Gate to Source Gate Charge - 16 - nC Qgd Gate to Drain “Miller” Charge - 36 - nC ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1.2 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 18A RG = 4.7Ω (Note 4) -2 7 6 4 n s tr Turn-On Rise Time - 17 44 ns td(off) Turn-Off Delay Time - 92 194 ns tf Turn-Off Fall Time - 4 18 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 18A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 18A dIF/dt = 100A/μs - 166 - ns Qrr Reverse Recovery Charge - 1.3 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 36A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics

FCA36N60NF N-Channel MOSFET, FRFET FCA36N60NF Rev. A www.fairchildsemi.com5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

FCA36N60NF N-Channel MOSFET, FRFET FCA36N60NF Rev. A www.fairchildsemi.com6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

FCA36N60NF N-Channel MOSFET, FRFET FCA36N60NF Rev. A www.fairchildsemi.com7 Mechanical Dimensions TO-3PN

FCA36N60NF N-Channel MOSFET, FRFET FCA36N60NF Rev. A www.fairchildsemi.com8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITH OUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERM S OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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