FCA35N60 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- 650V @ T J = 150°C
- T y p . RDS(on) = 0.079Ω
- Ultra low gate charge ( Typ. Q g = 139nC )
- Low effective output capacitance ( Typ. C oss.eff = 340pF )
- 100% avalanche tested
Description
SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge bal- ance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superi or switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switchi ng mode operation for system miniaturization and higher efficiency. GSD TO-3PN D G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 600 V VGSS Gate-Soure voltage ±30 V ID D r a i n C u r r e n t -Continuous (TC = 25oC) 35 A-Continuous (TC = 100oC) 22.2 IDM D r a i n C u r r e n t - P u l s e d (Note 1) 105 A EAS Single Pulsed Avalanche Energy (Note 2) 1455 mJ IAR Avalanche Current (Note 1) 35 A EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (TC = 25oC) 312.5 W - Derate above 25oC2 . 5 W / oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction to Case - 0.4 oC/WRθCS Thermal Resistance, Case-to-Heat Sink 0.24 - RθJA Thermal Resistance, Junction to Ambient - 42 *Drain current limited by maximum junction temperature
FCA35N60 Rev. A www.fairchildsemi.com2 Package Marking and Ordering Information TC = 25oC unless otherwise noted
Electrical Characteristics
Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCA35N60 FCA35N60 TO-3PN - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V ID = 250µA, VGS = 0V, TJ = 150oC- 6 5 0 - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC- 0 . 6 - V / oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 µAVDS = 480V, TC = 125oC- - 1 0 IGSS Gate to Body Leakage Current V GS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage V GS = VDS, ID = 250µA3 . 0 - 5 . 0 V RDS(on) Static Drain to Source On Resistance V GS = 10V, ID = 17.5A - 0.079 0.098 Ω gFS Forward Transconductance V DS = 40V, ID = 17.5A - 28.8 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 4990 6640 pF Coss Output Capacitance - 2380 3170 pF Crss Reverse Transfer Capacitance - 140 - pF Coss Output Capacitance V DS = 480V, VGS = 0V, f = 1.0MHz - 113 - pF Coss eff. Effective Output Capacitance V DS = 0V to 480V, VGS = 0V - 340 - pF Qg Total Gate Charge at 10V VDS = 480V, ID = 35A VGS = 10V (Note 4) - 139 181 nC Qgs Gate to Source Gate Charge - 31 - nC Qgd Gate to Drain “Miller” Charge - 69 - nC ESR Equivalent Series Resistance (G-S) Drain Open, F= 1MHZ -1 . 4- Ω td(on) Turn-On Delay Time VDD = 300V, ID = 35A RG = 4.7Ω (Note 4) -3 4 7 8 n s tr Turn-On Rise Time - 120 250 ns td(off) Turn-Off Delay Time - 105 220 ns tf Turn-Off Fall Time - 73 155 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage V GS = 0V, ISD = 35A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 35A dIF/dt = 100A/µs - 614 - ns Qrr Reverse Recovery Charge - 16.3 - µC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: I AS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: I SD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics
FCA35N60 Rev. A www.fairchildsemi.com5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms
FCA35N60 Rev. A www.fairchildsemi.com6 Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCA35N60 Rev. A www.fairchildsemi.com7 Mechanical Dimensions TO-3PN
FCA35N60 Rev. A www.fairchildsemi.com8 Rev. I38 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * EZSWITCH™ and FlashWriter ® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WI THOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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