FC4227 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Transistors NPN Transistors FC4227 ■ Features
- High gain:｜ S21e ｜ typical value is 11.5dB
- Low noise: NF typical value is 1.5dB
- The gain bandwidth product: fT typical value is 7GHz
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 65 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -65 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 10 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 1.5 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 100 Emitter cut-off current IEBO VEB= 1.5V , IC=0 100 DC current gain hFE VCE= 3V, IC=7mA 60 150 300 Power gain | S2le| VCE= 3V, IC= 7mA,f=1GHz 11.5 Noise factor NF VCE= 3V, IC= 7mA,f=1GHz 1.5 2 Collector output feedback capacitance Cre VCB= 10V, IE= 0mA,f=1MHz 0.65 pF Transition frequency fT VCE= 3V, IC= 7mA,f=1GHz 7 GHz V nA dB ■ Classification of hfe Type FC4227-A FC4227-B FC4227-C FC4227-D FC4227-E Rank 60-100 90-140 130-180 170-250 250-300 Marking R33 R34 R35
www.kexin.com.cn2 Transistors NPN Transistors FC4227 ■ Scattering Parameters (VCE=3V, IC=7mA, ZO=50Ω) Test Frequency S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG
www.kexin.com.cn 3 Tran sistors NPN Transistors FC4227 ■ Typical Characterisitics
www.kexin.com.cn4 Tran sistors NPN Transistors FC4227 ■ Typical Characterisitics SMITH 图 (VCE=3V, IC=7mA) S21e -FREQUENCY S12e -FREQUENCY S11e -FREQUENCY S22e -FREQUENCY