FC40SA50FK

FC40SA50FK IRF | Alldatasheet

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www.irf.com 1 HEXFET® Power MOSFET Benefits

Applications

! Low Gate Charge Qg results in Simple Drive Requirement ! Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ! Fully Characterized Capacitance and Avalanche Voltage and Current ! Low RDS(on) ! Fully Insulated Package Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 40 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 26 A IDM Pulsed Drain Current " 160 PD @TC = 25°C Power Dissipation 430 W Linear Derating Factor 3.45 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt # 9.0 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Absolute Maximum Ratings Avalanche Characteristics Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy$ – 1240 mJ IAR Avalanche Current" –4 0 A EAR Repetitive Avalanche Energy" –4 3 m J Symbol Parameter Typ. Max. Units RθJC Junction-to-Case – 0.29 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.05 – Thermal Resistance VDSS RDS(on) typ. I D 500V 0.084 Ω 40A SOT-227 FC40SA50FK I27139- 01/03 ! Switch Mode Power Supply (SMPS) ! Uninterruptible Power Supply ! High Speed Power Switching ! Hard Switched and High Frequency Circuits

2 www.irf.com I27139- 01/03 FC40SA50FK Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 23 – – S V DS = 50V, ID = 28A Qg Total Gate Charge – – 270 I D = 40A Qgs Gate-to-Source Charge – – 84 nC V DS = 400V Qgd Gate-to-Drain ("Miller") Charge – – 130 V GS = 10V, See Fig. 6 and 13 % td(on) Turn-On Delay Time – 25 – V DD = 250V tr Rise Time – 140 – I D = 40A td(off) Turn-Off Delay Time – 55 – R G = 1.0Ω tf Fall Time – 74 – V GS = 10V,See Fig. 10 % Ciss Input Capacitance – 8310 – V GS = 0V Coss Output Capacitance – 960 – V DS = 25V Crss Reverse Transfer Capacitance – 120 – pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance – 10170 – V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance – 240 – V GS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance – 440 – V GS = 0V, VDS = 0V to 480V ' Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 – – V V GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – 0.60 – V/°C Reference to 25°C, ID = 1mA( RDS(on) Static Drain-to-Source On-Resistance – 0.084 0.10 Ω VGS = 10V, ID = 24A % VGS(th) Gate Threshold Voltage 3.0 – 5.0 V V DS = VGS, ID = 250µA –– 5 0 µA VDS = 500V, VGS = 0V – – 250 V DS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage – – 250 V GS = 30V Gate-to-Source Reverse Leakage – – -250 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current " Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) #ISD ≤ 40A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: $ Starting TJ = 25°C, L = 1.55mH, RG = 25Ω , IAS = 40A, dv/dt =5.5V/ns (See Figure 12a) % Pulse width ≤ 300µs; duty cycle ≤ 2%. ' Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current – – 40 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current – – 160 integral reverse (Body Diode) " p-n junction diode. VSD Diode Forward Voltage – – 1 V T J = 25°C, IS = 40A, VGS = 0V % – 620 940 T J = 25°C, IF = 47A di/dt = 100A/µs % –1 4 2 1 IRRM Reverse Recovery Current – 38 - A T J = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns µC

www.irf.com 3 I27139- 01/03 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) VGS=10V ID=24A 0.01 0.1 100 1000 0.1 1 10 100 VGS TOP 15 8.0 7.0 6.0 5.5 BOTTOM 5.0 5 V 20 µs PULSE WIDTH TJ=25°C 0.1 100 1000 0 . 111 0 1 0 0 VGS TOP 15 8.0 7.0 6.0 5.5 5.0 BOTTOM 4.5 4.5 V 20 µs PULSE WIDTH T 150°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)VDS, Drain-to-Source Voltage (V) 0.1 100 1000 4 5 6 7 8 9 10 11 12 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) TJ=150°C TJ=25°C VDS=20V 20µs PULSE WIDTH

4 www.irf.com I27139- 01/03 FC40SA50FK Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0.1 100 1000 0.2 0.7 1.2 1.7 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) VGS=0 TJ=150°C TJ=25°C 0 100 200 300 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) ID=40A 100 1000 10 100 1000 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 100us 10ms 1ms OPERA TION IN THIS A REA LIMITED BY RDS(on) TC = 25°C TJ = 150°C Single Pulse

www.irf.com 5 I27139- 01/03 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) 0.001 0.010 0.100 1.000 t1, Rectangular Pulse Duration (s) Thermal Response ( ZthJC SINGLE PULSE (THERMA L RESPONSE) 0.01 0.02 0.05 0.10 0.30 D = 0.50 Notes: 1. Duty factor D = t1/t2 2. Peak TJ=PDM x ZthJC + TC Ri (°C/W) τi (sec) 0.161 0.000759 0.210 0.017991 0.147 0.06094 τJ τJ τ τC Ci i/Ri Ci= τi/Ri

6 www.irf.com I27139- 01/03 FC40SA50FK Q G Q GS Q GD VG Charge VGS V Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform Fig 12a. Maximum Avalanche Energy Vs. Drain Current Fig 12d. Unclamped Inductive Waveforms Fig 12c. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 500 1000 1500 2000 2500 3000 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) EAS, Single Pulse Avalanche Energy (mJ) ID ... TOP 18A 26A BOTTOM 40A 1mA VGS VDSD.U.T. R L DI

www.irf.com 7 I27139- 01/03 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop R e-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFET® Power MOSFETs * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit RG VDD

• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance Current Transformer

8 www.irf.com I27139- 01/03 FC40SA50FK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .01/02 QUANTITY PER TUBE IS 10 M4 SREW AND WASHER INCLUDED Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 )4X 15.00 ( .590 ) R FULL 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -C- 0.25 ( .010 ) M C A M B M 25.70 ( 1.012 ) 25.20 ( .992 ) -B- 6.25 ( .246 ) CHAMFER 2.00 ( .079 ) X 457 -A- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) LEAD ASSIGMENTS IGBT E C GE S D GS HEXFET A1 K2 K1 A2 HEXFRED AUX-S HEXFET Note : AUX-S is a low current input intended for driving purpose only