FBA7002K GWSEMI | Alldatasheet

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MARKING: Equivalent Circuit  Low On-Resistance  Low Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Load Switch  Portable Applications  Power Management Functions ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Ta=25℃ ID 0.41 A Ta=85℃ 0.30 Pulsed Drain Current IDM 1.2 A Power Dissipation PD 0.1 W Thermal Resistance from Junction to Ambient RθJA 1250 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~ +150 ℃ FB A7002K N-Channel MOSFET Plastic-Encapsulate MOSFETs V(BR)DSS RDS(on)MAX ID 60V 1.5Ω@10V 0.41A 1.8Ω@4.5V

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 60 V Zero gate voltage drain current IDSS VDS =60V,VGS = 0V 100 nA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±10 µA VGS =±5V, VDS = 0V ±1 Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1.3 1.4 2.3 V Drain-source on-resistancea RDS(on) VGS =10V, ID =40mA 1.2 1.5 Ω VGS =4.5V, ID =35mA 1.3 1.8 Forward tranconductancea gfs VDS = 5V, ID = 40mA 100 mS Diode forward voltage VSD VGS =0V, IS =300mA 0.84 1.1 V Dynamic characteristics Input Capacitanceb Ciss VDS =40V,VGS =0V,f =1MHz 41 80 pF Output Capacitanceb Coss 3.6 7 Reverse Transfer Capacitanceb Crss 2.9 5.6 Gate resistance Rg VDS = 0V, VGS = 0V, f = 1MHz 81 200 Ω Total Gate Charge Qg VGS =4.5V VDS = 50V, ID = 0.41A 0.72 1.5 nC VGS =10V 1.41 2.8 Gate-Source Charge Qgs 0.24 0.4 Gate-Drain Charge Qgd 0.24 0.5 Turn-on delay timeb td(on) VDS=30V,RL=50R, VGS=10V,RG=6Ω 3.98 10 ns Turn-on rise timeb tr 4.95 10 Turn-off delay timeb td(off) 18.52 40 Turn-off fall timeb tf 11.94 25 Notes: a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. FB A7002K N-Channel MOSFET

0.0 0.2 0.4 0.6 0.8 Ta=25℃ Plused Output Characteristics VGS=10V VGS=7V VGS=4.5V VGS=3V Drain Current ID(A) Drain to Source Voltage VDS(V) 1 2 3 4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VDS=3V Plused Transfer Characteristics Ta=125℃ Drain Current(A) Gate to Source Voltage VGS(V) Ta=25℃ 0.4 0.8 1.2 1.6

2.0 Ta=25℃

RDS(ON)——ID On-Resistancer RDSON(Ω) Drain Current ID(A) VGS=10V VGS=4.5V 2 4 6 8 10 RDS(ON)——VGS Ta=25℃ ID=500mA Plused On-Resistancer RDSON(Ω) Gate to Source Voltage VGS(V) Ta=125℃ 1E-3 0.01 0.1 IS——VSD Plused Ta=125℃ Source Current IS(A) Source to Drain Voltage VSD(V) Ta=25℃ 25 50 75 100 125 1.0 1.1 1.2 1.3 1.4 1.5 Threshold Voltage Threshold Voltage VTH(V) Juction Temperature TJ(℃) ID=250uA FB A7002K N-Channel MOSFET 7\\SLFDO&KDUDFWHULVWLFV

E D b L L e A Typ. A 0.47 A1 0.03 D 1.00 E 0.60 b 0.50 e 0.65 e2 0.35 L 0.25 b1 0.15 Min. Max. 0.00 0.95 Dimensions In Millimeters (mm)Symbol 0.40 0.55 0.05 1.05 0.30 0.05 REF. 0.55 0.65 0.45 0.55 - - - - 0.10 0.20 0.20 FB A7002K N-Channel MOSFET Plastic surface mounted package; 3 leads DFN1006 PACKAGE OUTLINE -3L