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Technical content

Features

  • UL Certified No. E209204 (UL1557)
  • 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection
  • Low Thermal Resistance Using Ceramic Substrate
  • Full-Wave Bridge Rectifier and High-Performance Output Diode
  • Optimized for 20kHz Switching Frequency
  • Built-in NTC Thermistor for Temperature Monitoring
  • Isolation Rating: 2000 Vrms/min.

Applications

  • Single-Phase Boost PFC Converter Related Source
  • AN-9091 - Boost PFC Inductor Design Guide
  • AN-9072 - Motion SPM® 45 Series Mounting Guid- ance General Description The FBA42060 is an advanced PFC SPM ® 45 module providing a fully-featured, high-performance Boost PFC (Power Factor Correction) input power stage for con- sumer, medical, and industrial applications. These mod- ules integrate optimized gate drive of the built-in IGBT to minimize EMI and losses, while also providing multi- ple on-module protection features including under-volt- age lockout, over-current shutdown, thermal monitoring, and fault reporting. These modules also feature a full- wave rectifier and high-performance output diode for additional space savings and mounting convenience.

Figure 1. Package Overview

  • For IGBTs: gate drive circuit, Over-Curr ent Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
  • Fault signal: corresponding to OC and UV fault
  • Built-in NTC thermistor: temperature monitoring
  • Input interface: active-HIGH interface, wor ks with 3.3 / 5 V logic, Schmitt trigger input Pin Configuration

Figure 2. Top View

Figure 3. Internal Block Diagram

3 S AC Input for S-Phase

4 R AC Input for R-Phase

6 L Inductor Connection

7 P Positive DC-Link Input

11 V FO Fault Output

13 IN PWM Input for IGBT Drive

14 COM Common Supply Ground

15 COM Common Supply Ground

17 COM Common Supply Ground

©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FBA42060 Rev. C5 FBA42060 PFC SPM® 45 Series for Single-Phase Boost PFC Absolute Maximum Ratings Converter Part Control Part Total System Thermal Resistance Symbol Parameter Conditions Rating Unit Vi Input Supply Voltage Applied between R - S 276 V rms Vi(Surge) Input Supply Voltage (Surge) Applied between R - S 500 V VPN Output Voltage Applied between P R - NR 450 V VPN(Surge) Output Supply Voltage (Surge) Applied between P R - NR 500 V VCES Collector - Emitter Voltage 600 V VRRM Repetitive Peak Reverse Voltage 600 V ± IC Each IGBT Collector Current T C = 25°C, VCC = 15 V 20 A ± ICP Each IGBT Collector Current (Peak) T C = 25°C, Under 1 ms Pulse Width 30 A IFSM Peak Forward Surge Current Single Half Sine-Wave 200 A TJ Operating Junction Temperature -40 ~ 150 °C Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between V CC - COM 20 V VIN Input Signal Voltage Applied between IN - COM -0.3 ~ V CC + 0.3 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V CC + 0.3 V IFO Fault Output Current Sink Current at V FO Pin 1 mA VSC Current Sensing Input Voltage Applied between C SC - COM -0.3 ~ V CC + 0.3 V Symbol Parameter Conditions Rating Unit TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinus oidal, AC 1 Minute, Connect Pins to Heat Sink Plate

2000 V rms

Symbol Parameter Condition Min. Typ. Max. Unit Rth(j-c)Q Junction to Case Thermal Resistance at Chip Center IGBT - - 2.5 °C/W Rth(j-c)D FRD - - 2.5 °C/W Rth(j-c)R Rectifier - - 2.5 °C/W

  1. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.

For the detailed information, please see Figure 4. Figure 4. Switching Time Definitions

  1. Over-current protection is functioning on IGBT.
  2. TTH is the temperature of thermister itself. To know case temperature (TC), please make the experiment considering your application.

Figure 5. R-T Curve of The Built-in Thermistor

  1. The PFC SPM® product might not make response if input pulse width is less than the recommended value.

Figure 6. Flatness Measurement Position

a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied. a2 : Normal operation: IGBT ON and carrying current. a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection

c1 : Normal operation: IGBT ON and carrying current. c2 : Over-current detection (OC trigger). c3 : Hard IGBT gate interrupt. c5 : Fault output timer operation starts. c6 : Input “LOW”: IGBT OFF state. c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. Figure 8. Over Current Protection

Figure 9. Typical Application Circuit

  1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
  2. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or PFC controller power supply with a resistor that makes IFO up to 1 mA.
  3. Input signal is active-HIGH type. There is a 5 k  resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits is recommanded for the prevention of

input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω, CPS = 1 nF).

  1. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
  2. In the over-current protection circuit, please select the RF, CSC time constant in the range 1~2 μs.
  3. Each capacitors should be mounted as close to the pins as possible.
  4. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
  5. Internal NTC thermistor can be used for monitoring the case temperature and protecting the device from the over-heating operation. Please select an appropriate resistor RTH

according to the application. For example, use RTH = 4.7 kΩ that will make the voltage across RTH to be 2.5 V at 85°C of the case temperature.

  1. Please use an appropriate shunt resistor RSH to protect the intenal IGBT from the over-current operation.
  2. It’s recommended that anti-parallel diode should be connected with IGBT.

©2012 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com FBA42060 Rev. C5 FBA42060 PFC SPM® 45 Series for Single-Phase Boost PFC Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD23AA.pdf

©2012 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com FBA42060 Rev. C5 FBA42060 PFC SPM® 45 Series for Single-Phase Boost PFC