FBA3139K GWSEMI | Alldatasheet

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Plastic-Encapsulate MOSFETs DFN1006-3L FEATURE z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate APPLICATION z Load/ Power Switching z I n t e r f a c i n g S w i t c h i n g z Battery Management for Ultra Small Portable Electronics z Logic Level Shift MARKING: ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -20 V Typical Gate-Source Voltage V GS ±12 V Continuous Drain Current (note 1) I D -0.66 A Pulsed Drain Current (tp=10us) I DM -1.2 A Power Dissipation (note 1) P D 100 mW Thermal Resistance from Junction to Ambient (note 1) R θJA 1250 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~ 150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ Equivalent Circuit FB A3139K P-Channel MOSFET V (BR)DSS R DS(on) MAX I D -20V 520mΩ@-4.5V -0.66A 780mΩ@-2.5V 950mΩ(TYP)@-1.8V

MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise noted Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =-250µA -20 V Zero gate voltage drain current I DSS V DS =-20V,V GS = 0V -1 µA Gate-body leakage current I GSS V GS =±10V, V DS = 0V ±20 uA Gate threshold voltage (note 2) GS(th) V V DS GS , I D Drain-source on-resistance(note 2) DS(o R V GS =-4.5V, I D =-1A 520 m Ω V GS =-2.5V, I D =-0.8A 780 mΩ GS =-1.8V, I D =-0.5A V 950 mΩ Forward tranconductance(note 2) FS g V DS =-10V, I D =-0.54A 1.2 S Diode forward voltage SD V S =I -0.5A, V GS = 0V -1.2 V DYNAMIC PARAMETERS(note 4) Input Capacitance C iss V DS =-16V,V GS =0V,f =1MHz 113 pF Output Capacitance C oss 15 pF Reverse Transfer Capacitance C rss 9 pF SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) d(on) t V DD =-4.5V,V GS =-10V, I D =-200mA,R GEN =10Ω 9 ns Turn-on rise time (note 3) r t 5.7 ns Turn-off delay time (note 3) d(off) t 32.6 ns Turn-off fall time (note 3) f t 20.3 ns -0.61 450 650 FB A3139K P-Channel MOSFET

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 T a =25 Pl used V GS =-3 .1V,-4.5V,-6V V GS =-2 .5V V GS =-1 .8V O utput Characteristics Dr ain Current I D (A) Dr ain to Source Voltage V DS (V) V GS =-1 .5V 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS=-3V Pl used T ransfer Characteristics T a =25 T a =125 Drain Current I D (A) Gate to Source Voltage V GS (V) 0.0 -0.3 -0.6 -0.9 -1.2 -1.5 Ta=25℃ Plused RDS(ON)-ID VGS=-4.5V VGS=-2.5V VGS=-1.8V On-Resistancer RDSON(Ω) Drain Current ID(A) 0.0 0.4 0.8 1.2 1.6 2.0 T a =25 R D S(ON) GS I D =-0 .5A Pl used T a =125 On- Resistancer R D SON Gate to Source Voltage V GS (V) 1E-3 0.01 0.1 Plused IS-VSD Ta=125℃ Source Current IS(A) Source to Drain Voltage VSD(V) Ta=25℃ 100 125 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 T hreshold Voltage Thr eshold Voltage V TH (V) J uction Temperature T J I D 50uA 7\\SLFDO&KDUDFWHULVWLFV FB A3139K P-Channel MOSFET

E D b L L e A Typ. A 0.47 A1 0.03 D 1.00 E 0.60 b 0.50 e 0.65 e2 0.35 L 0.25 b1 0.15 Min. Max. 0.00 0.95 Dimensions In Millimeters (mm)Symbol 0.40 0.55 0.05 1.05 0.30 0.05 REF. 0.55 0.65 0.45 0.55 - - - - 0.10 0.20 0.20 FB A3139K P-Channel MOSFET Plastic surface mounted package; 3 leads DFN1006 PACKAGE OUTLINE -3L