IRFB9N60A IRF | Alldatasheet
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HEXFET ® Power MOSFET Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.8 A IDM Pulsed Drain Current 37 PD @T C = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy 290 mJ IAR Avalanche Current 9.2 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.75 R θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R θJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 600V R DS(on) = 0.75Ω ID = 9.2A l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleling l Simple Drive Requirements
Description
www.irf.com 1 TO -220AB IRFB9N60A PD - 91811
2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V V GS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.75 Ω VGS = 10V, ID = 5.5A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 5.5 ––– ––– S V DS = 25V, ID = 5.5A ––– ––– 25 µA VDS = 600V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– 100 V GS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Q g Total Gate Charge ––– ––– 49 I D = 9.2A Q gs Gate-to-Source Charge ––– ––– 13 nC V DS = 400V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 20 V GS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– V DD = 300V tr Rise Time ––– 25 ––– I D = 9.2A td(off) Turn-Off Delay Time ––– 30 ––– R G = 9.1Ω tf Fall Time ––– 22 ––– R D = 35.5Ω ,See Fig. 10 Between lead,––– ––– 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 1400 ––– V GS = 0V C oss Output Capacitance ––– 180 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5 C oss Output Capacitance ––– 1957 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 49 ––– V GS = 0V, VDS = 480V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 96 ––– V GS = 0V, VDS = 0V to 480V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 6.8mH RG = 25Ω , IAS = 9.2A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V T J = 25°C, IS = 9.2A, VGS = 0V trr Reverse Recovery Time ––– 530 800 ns T J = 25°C, IF = 9.2A Q rr Reverse RecoveryCharge ––– 3.0 4.4 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 9.2 A Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.7V 100 1 10 100 20µs PULSE WIDTH T = 150CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.7V 0.1 100 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 9.2A
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 10 20 30 40 50 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 9.2A V = 120VDS V = 300VDS V = 480VDS 0.1 100 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 100 1000 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms 400 800 1200 1600 2000 2400 1 10 100 1000 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V ) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 400V
www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 T , Case Temperature( C) I , Drain Current (A) D
6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0. 01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V 25 50 75 100 125 150 100 200 300 400 500 600 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 4.1A 5.8A 9.2A
www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD
- dv/dt controlled by RG
- Driver same type as D.U.T.
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer
8 www.irf.com LEAD ASSI GNMENTS 1 - GATE 2 - DRAIN 3 - SOU RC E 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4. 69 (. 185) 4. 20 (. 165) 3X 0. 93 (. 037) 0. 69 (. 027) 4. 06 (.160) 3. 55 (.140) 1. 15 (. 045) MIN 6. 47 (. 255) 6. 10 (. 240) 3.78 (. 149) 3.54 (. 139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1. 40 (. 055) 1. 15 (. 045) 2.54 (.100) 0.36 (.0 14 ) M B A M 1 2 3 NOTES: 1 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14. 5M, 1982. 3 OUTLI NE CONFORMS TO JEDEC OUTLI NE TO-220AB. 2 C O N TR O L LIN G D IM E N S IO N : INC H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NOT I NCLUDE BURRS. Part Marking Information TO-220AB Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) PART NUMBERINTERNATIONAL RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 W ITH ASSEMBLY LOT CODE 9B1M ASSEMBLY LOT CO DE DATE CODE ( Y Y WW) YY = YEAR WW = WEE K 9246 IRF1010 9B 1M A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98