FB50R07W2E3_C36 INFINEON | Alldatasheet
Document overview
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- PDF pages: 23
Technical content
Features
- Electrical features - V CES = 650 V - I C nom = 50 A / ICRM = 100 A - Trench IGBT 3 - Low switching losses
- Mechanical features - Al 2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications
- Air conditioning Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J FB50R07W2E3_C36 EasyPIM™ module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2022-01-19
FB50R07W2E3_C36 EasyPIM™ module Table of contents Datasheet 2 Revision 1.10 2022-01-19
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI >200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 6 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 5 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 40 80 N Weight G 39 g Note: The current under continuous operation is limited to 25 A rms per connector pin.
2 IGBT , Inverter
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 650 V Implemented collector current ICN 50 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 65 °C 45 A Repetitive peak collector current ICRM tP = 1 ms 100 A Gate-emitter peak voltage VGES ±20 V FB50R07W2E3_C36 EasyPIM™ module Datasheet 3 Revision 1.10 2022-01-19
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C 1.45 1.90 V Tvj = 125 °C 1.60 Tvj = 150 °C 1.70 Gate threshold voltage VGEth IC = 0.8 mA, VCE = VGE, Tvj = 25 °C 5.05 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 400 V 0.5 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 3.1 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.095 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 0.018 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω Tvj = 25 °C 0.029 µs Tvj = 125 °C 0.030 Tvj = 150 °C 0.031 Rise time (inductive load) tr IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω Tvj = 25 °C 0.059 µs Tvj = 125 °C 0.060 Tvj = 150 °C 0.061 Turn-off delay time (inductive load) tdoff IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω Tvj = 25 °C 0.180 µs Tvj = 125 °C 0.210 Tvj = 150 °C 0.220 Fall time (inductive load) tf IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω Tvj = 25 °C 0.110 µs Tvj = 125 °C 0.140 Tvj = 150 °C 0.150 Turn-on energy loss per pulse Eon IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8.2 Ω, di/dt = 550 A/µs (Tvj = 150 °C) Tvj = 25 °C 1.37 mJ Tvj = 125 °C 1.78 Tvj = 150 °C 1.89 Turn-off energy loss per pulse Eoff IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 8.2 Ω, dv/dt =
4000 V/µs (Tvj = 150 °C)
Tvj = 25 °C 1.17 mJ Tvj = 125 °C 1.57 Tvj = 150 °C 1.66 SC data ISC VGE ≤ 15 V, VCC = 360 V, VCEmax=VCES-LsCE*di/dt tP ≤ 6 µs, Tvj=150 °C 250 A Thermal resistance, junction to heat sink RthJH per IGBT 1.02 K/W (table continues...) FB50R07W2E3_C36 EasyPIM™ module Datasheet 4 Revision 1.10 2022-01-19
Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Temperature under switching conditions Tvj op -40 150 °C
3 Diode, Inverter
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 650 V Continuous DC forward current IF 50 A Repetitive peak forward current IFRM tP = 1 ms 100 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 370 A²s Tvj = 150 °C 330 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A, VGE = 0 V Tvj = 25 °C 1.56 1.95 V Tvj = 125 °C 1.49 Tvj = 150 °C 1.45 Peak reverse recovery current IRM IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 150 °C) Tvj = 25 °C 34 A Tvj = 125 °C 48 Tvj = 150 °C 53 Recovered charge Qr IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 150 °C) Tvj = 25 °C 2.4 µC Tvj = 125 °C 4.4 Tvj = 150 °C 5.1 Reverse recovery energy Erec IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.62 mJ Tvj = 125 °C 1.11 Tvj = 150 °C 1.28 Thermal resistance, junction to heat sink RthJH per diode 1.45 K/W Temperature under switching conditions Tvj op -40 150 °C FB50R07W2E3_C36 EasyPIM™ module Datasheet 5 Revision 1.10 2022-01-19
4 Diode, Rectifier
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 80 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 80 °C 50 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 493 A Tvj = 150 °C 378 I2t - value I2t tP = 10 ms Tvj = 25 °C 1210 A²s Tvj = 150 °C 714 Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A Tvj = 150 °C 0.98 V Reverse current Ir Tvj = 150 °C, VR = 1200 V 0.1 mA Thermal resistance, junction to heat sink RthJH per diode 1.43 K/W Temperature under switching conditions Tvj, op -40 150 °C
5 IGBT , Boost
Table 9 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 650 V Implemented collector current ICN 75 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 80 °C 40 A Repetitive peak collector current ICRM tP = 1 ms 150 A Gate-emitter peak voltage VGES ±20 V FB50R07W2E3_C36 EasyPIM™ module Datasheet 6 Revision 1.10 2022-01-19
Table 10 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 40 A, VGE = 15 V Tvj = 25 °C 1.28 1.66 V Tvj = 125 °C 1.35 Tvj = 150 °C 1.37 Gate threshold voltage VGEth IC = 0.75 mA, VCE = VGE, Tvj = 25 °C 3.85 4.60 5.35 V Gate charge QG VGE = ±15 V, VCE = 400 V 0.326 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.11 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.014 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 0.021 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 40 A, VCE = 300 V, VGE = ±15 V, RGon = 6.2 Ω Tvj = 25 °C 0.026 µs Tvj = 125 °C 0.028 Tvj = 150 °C 0.029 Rise time (inductive load) tr IC = 40 A, VCE = 300 V, VGE = ±15 V, RGon = 6.2 Ω Tvj = 25 °C 0.020 µs Tvj = 125 °C 0.021 Tvj = 150 °C 0.021 Turn-off delay time (inductive load) tdoff IC = 40 A, VCE = 300 V, VGE = ±15 V, RGoff = 6.2 Ω Tvj = 25 °C 0.108 µs Tvj = 125 °C 0.130 Tvj = 150 °C 0.135 Fall time (inductive load) tf IC = 40 A, VCE = 300 V, VGE = ±15 V, RGoff = 6.2 Ω Tvj = 25 °C 0.007 µs Tvj = 125 °C 0.011 Tvj = 150 °C 0.013 Turn-on energy loss per pulse Eon IC = 40 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 6.2 Ω, di/dt =
1150 A/µs (Tvj = 150 °C)
Tvj = 25 °C 0.82 mJ Tvj = 125 °C 1.2 Tvj = 150 °C 1.28 Turn-off energy loss per pulse Eoff IC = 40 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 6.2 Ω, dv/dt =
6500 V/µs (Tvj = 150 °C)
Tvj = 25 °C 0.26 mJ Tvj = 125 °C 0.36 Tvj = 150 °C 0.39 Thermal resistance, junction to heat sink RthJH per IGBT 1.40 K/W Temperature under switching conditions Tvj op -40 150 °C FB50R07W2E3_C36 EasyPIM™ module Datasheet 7 Revision 1.10 2022-01-19
6 Diode, Boost
Table 11 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 650 V Implemented forward current IFN 75 A Continuous DC forward current IF 40 A Repetitive peak forward current IFRM tP = 1 ms 150 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 320 A²s Tvj = 150 °C 280 Table 12 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 40 A, VGE = 0 V Tvj = 25 °C 1.28 1.65 V Tvj = 125 °C 1.20 Tvj = 150 °C 1.16 Peak reverse recovery current IRM IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 25.6 A Tvj = 125 °C 33.3 Tvj = 150 °C 36.4 Recovered charge Qr IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 1.25 µC Tvj = 125 °C 2.62 Tvj = 150 °C 3.04 Reverse recovery energy Erec IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 0.2 mJ Tvj = 125 °C 0.43 Tvj = 150 °C 0.52 Thermal resistance, junction to heat sink RthJH per diode 1.52 K/W Temperature under switching conditions Tvj op -40 150 °C FB50R07W2E3_C36 EasyPIM™ module Datasheet 8 Revision 1.10 2022-01-19
7 Diode, Reverse
Table 13 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 650 V Continuous DC forward current IF 10 A Repetitive peak forward current IFRM tP = 1 ms 20 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 12.5 A²s Tvj = 150 °C 9.5 Table 14 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 10 A, VGE = 0 V Tvj = 25 °C 1.60 2.00 V Tvj = 125 °C 1.55 Tvj = 150 °C 1.52 Thermal resistance, junction to heat sink RthJH per diode 3.92 K/W Temperature under switching conditions Tvj op -40 150 °C
8 NTC-Thermistor
Table 15 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. FB50R07W2E3_C36 EasyPIM™ module Datasheet 9 Revision 1.10 2022-01-19
9 Characteristics diagrams
Output characteristic (typical), IGBT , Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT , Inverter IC = f(VCE) Tvj = 150 °C 100 100 Transfer characteristic (typical), IGBT , Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT , Inverter E = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V 5 6 7 8 9 10 11 12 100 0 10 20 30 40 50 60 70 80 90 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 FB50R07W2E3_C36 EasyPIM™ module Datasheet 10 Revision 1.10 2022-01-19
Switching losses (typical), IGBT , Inverter E = f(RG) VGE = ± 15 V, IC = 50 A, VCE = 300 V Switching times (typical), IGBT , Inverter t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 Switching times (typical), IGBT , Inverter t = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C Transient thermal impedance , IGBT , Inverter Zth = f(t) 0 10 20 30 40 50 60 70 80 90 0.001 0.01 0.1 0.001 0.01 0.1 1 10 0.01 0.1 FB50R07W2E3_C36 EasyPIM™ module Datasheet 11 Revision 1.10 2022-01-19
Reverse bias safe operating area (RBSOA), IGBT , Inverter IC = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C Forward characteristic (typical), Diode, Inverter IF = f(VF) 0 100 200 300 400 500 600 700 100 110 120 100 Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 300 V, RGon = 8.2Ω Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 300 V, IF = 50 A 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FB50R07W2E3_C36 EasyPIM™ module Datasheet 12 Revision 1.10 2022-01-19
Transient thermal impedance, Diode, Inverter Zth = f(t) Forward characteristic (typical), Diode, Rectifier IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 100 Transient thermal impedance, Diode, Rectifier Zth = f(t) Output characteristic (typical), IGBT , Boost IC = f(VCE) VGE = 15 V 0.001 0.01 0.1 1 10 0.01 0.1 FB50R07W2E3_C36 EasyPIM™ module Datasheet 13 Revision 1.10 2022-01-19
Output characteristic field (typical), IGBT , Boost IC = f(VCE) Tvj = 150 °C Transfer characteristic (typical), IGBT , Boost IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT , Boost E = f(IC) RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 300 V, VGE = ± 15 V Switching losses (typical), IGBT , Boost E = f(RG) IC = 40 A, VCE = 300 V, VGE = ± 15 V 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 FB50R07W2E3_C36 EasyPIM™ module Datasheet 14 Revision 1.10 2022-01-19
Switching times (typical), IGBT , Boost t = f(IC) RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C Switching times (typical), IGBT , Boost t = f(RG) IC = 40 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 0 10 20 30 40 50 60 70 80 0.001 0.01 0.1 0 10 20 30 40 50 60 70 0.01 0.1 Transient thermal impedance , IGBT , Boost Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT , Boost IC = f(VCE) RGoff = 6.2 Ω, VGE = ±15 V, Tvj = 150 °C 0.001 0.01 0.1 1 10 0.01 0.1 0 100 200 300 400 500 600 700 100 FB50R07W2E3_C36 EasyPIM™ module Datasheet 15 Revision 1.10 2022-01-19
Capacity characteristic (typical), IGBT , Boost C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C Gate charge characteristic (typical), IGBT , Boost VGE = f(QG) IC = 75 A, Tvj = 25 °C 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 100 -15 -12 Forward characteristic (typical), Diode, Boost IF = f(VF) Switching losses (typical), Diode, Boost Erec = f(IF) VCE = 300 V, RGon = 6.2Ω 0 8 16 24 32 40 48 56 64 72 80 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 FB50R07W2E3_C36 EasyPIM™ module Datasheet 16 Revision 1.10 2022-01-19
Switching losses (typical), Diode, Boost Erec = f(RG) VCE = 300 V, IF = 50 A Transient thermal impedance, Diode, Boost Zth = f(t) 0 10 20 30 40 50 60 70 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.001 0.01 0.1 1 10 0.01 0.1 Forward characteristic (typical), Diode, Reverse IF = f(VF) Transient thermal impedance, Diode, Reverse Zth = f(t) 0.001 0.01 0.1 1 10 0.01 0.1 FB50R07W2E3_C36 EasyPIM™ module Datasheet 17 Revision 1.10 2022-01-19
Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 100 1000 10000 100000 FB50R07W2E3_C36 EasyPIM™ module Datasheet 18 Revision 1.10 2022-01-19
10 Circuit diagram
J Figure 1 FB50R07W2E3_C36 EasyPIM™ module Datasheet 19 Revision 1.10 2022-01-19
FB50R07W2E3_C36 EasyPIM™ module Datasheet 20 Revision 1.10 2022-01-19
12 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 FB50R07W2E3_C36 EasyPIM™ module Datasheet 21 Revision 1.10 2022-01-19
Revision history
0.10 2021-07-29 Initial version 1.00 2021-12-03 Final datasheet 1.10 2022-01-19 Final datasheet updated to V1.10 FB50R07W2E3_C36 EasyPIM™ module Datasheet 22 Revision 1.10 2022-01-19
All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-01-19 Published by Infineon Technologies AG
81726 Munich, Germany
© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB297-003 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.