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Technical content

HEXFET/G174/G32Power MOSFET S D G Benefits /G108Improved Gate, Avalanche and Dynamic dV/dt Ruggedness /G108Fully Characterized Capacitance and Avalanche SOA /G108Enhanced body diode dV/dt and dI/dt Capability /G108/G32Lead-Free /G108RoHS Compliant, Halogen-Free

Applications

/G108/G32High Efficiency Synchronous Rectification in SMPS /G108/G32Uninterruptible Power Supply /G108/G32High Speed Power Switching /G108/G32Hard Switched and High Frequency Circuits D2Pak IRFS4410ZPbF TO-220AB IRFB4410ZPbF TO-262 IRFSL4410ZPbF SD G SD G SD G D D D GDS Gate Drain Source VDSS 100V RDS(on) typ. 7.2m/c58 max. 9.0m/c58 ID (Silicon Limited) 97A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Form Quantity IRFB4410ZPbF TO-220 Tube 50 IRFB4410ZPbF IRFSL4410ZPbF TO-262 Tube 50 IRFSL4410ZPbF Tube 50 IRFS4410ZPbF Tape and Reel Left 800 IRFS4410ZTRLPbF Tape and Reel Right 800 IRFS4410ZTRRPbF Base Part Number Package Type Standard Pack Orderable Part Number IRFS4410ZPbF D2Pak /G32/G32/G32/G32/G32/G32/G32/G32/G49/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A IDM Pulsed Drain Current /c99 PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery /c101 V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy /c100 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy /c102 mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case /c106 ––– 0.65 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 /c106 ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D2Pak /c105/c106 ––– 40 300 Max. 390 242 See Fig. 14, 15, 22a, 22b, 230 -55 to + 175 ± 20 1.5 10lb/c120 in (1.1N/c120 m)

/G32/G32/G32/G32/G32/G32/G32/G32/G50/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 /G78/G111/G116/G101/G115/G58 /G129/G32Repetitive rating; pulse width limited by max. junction temperature. /G130/G32Limited by TJmax, starting TJ = 25°C, L = 0.143mH RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use above this value. /G131ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. /G132/G32Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G /G133/G32Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. /G134 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. /G135 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. /G136/G32/G82θ/G32/G105/G115/G32/G109/G101/G97/G115/G117/G114/G101/G100/G32/G97/G116/G32/G84/G74/G32/G97/G112/G112/G114/G111/G120/G105/G109/G97/G116/G101/G108/G121/G32/G57/G48/G176/G67/G46 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.70 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 140 ––– ––– S Qg Total Gate Charge ––– 83 120 nC Qgs Gate-to-Source Charge ––– 19 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 27 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 56 ––– td(on) Turn-On Delay Time ––– 16 ––– ns td(off) Turn-Off Delay Time ––– 43 ––– Ciss Input Capacitance ––– 4820 ––– pF Coss Output Capacitance ––– 340 ––– Crss Reverse Transfer Capacitance ––– 170 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) /c104/c3 ––– 420 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)/c103 ––– 690 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 97 A (Body Diode) ISM Pulsed Source Current ––– ––– 390 A (Body Diode)/c3/c99 VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C VR = 85V, ––– 46 69 TJ = 125°C IF = 58A Qrr Reverse Recovery Charge ––– 53 80 nC TJ = 25°C di/dt = 100A/μs /c102 ––– 82 120 TJ = 125°C IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 58A RG =2.7Ω VGS = 10V /c102 VDD = 65V ID = 58A, VDS =0V, VGS = 10V /c102 TJ = 25°C, IS = 58A, VGS = 0V /c102 integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA/c99 VGS = 10V, ID = 58A /c102 VDS = VGS, ID = 150μA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS =50V Conditions VGS = 10V /c102 VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.5 V GS = 0V, VDS = 0V to 80V /c104 , See Fig.11 VGS = 0V, VDS = 0V to 80V /c103/c3 Conditions VDS = 10V, ID = 58A ID = 58A VGS = 20V VGS = -20V

/G32/G32/G32/G32/G32/G32/G32/G32/G51/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output Characteristics Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V ≤60μs PULSE WIDTH Tj = 25°C 4.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V ≤60μs PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 0 2 04 06 08 0 1 0 0 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VGS, Gate-to-Source Voltage (V) VDS= 80V VDS= 40V VDS= 20V ID= 58A 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) TJ = 25°C TJ = 175°C VDS = 50V ≤60μs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = 58A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance (pF) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss

/G32/G32/G32/G32/G32/G32/G32/G32/G52/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 Fig 8. Maximum Safe Operating Area Fig 10. Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 11. Typical COSS Stored Energy Fig 9. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Avalanche Energy vs. DrainCurrent -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( °C ) 100 105 110 115 120 125 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Id = 5mA -10 0 10 20 30 40 50 60 70 80 90 100 VDS, Drain-to-Source Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Energy (μJ) VSD, Source-to-Drain Voltage (V) 0.1 100 1000 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 0 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) Tc = 25°C Tj = 175°C Single Pulse 100μsec 1msec 10msec DC 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 200 300 400 500 600 700 800 900 1000 EAS , Single Pulse Avalanche Energy (m J) ID TOP 6.4A 9.4A BOTTOM 58A 25 50 75 100 125 150 TC , Case Temperature (°C) 100 ID, Drain Current (A)

/G32/G32/G32/G32/G32/G32/G32/G32/G53/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 14. Typical Avalanche Current vs.Pulsewidth Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) =/G32/G68T/ ZthJC Iav = 2/G68T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) °C/W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc τJ τJ τ τC Ci i/Ri Ci= τi/Ri Ri (°C/W) τi (sec) 0.237 0.000178 0.413 0.003772 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 150 EAR , Avalanche Energy (m TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 58A tav (sec) 0.1 100 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 150°C and Tstart =25°C (Single Pulse)

/G32/G32/G32/G32/G32/G32/G32/G32/G54/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 /G70/G105/G103/G46/G32/G49/G55/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G67/G117/G114/G114/G101/G110/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116Fig 16. Threshold Voltage vs. Temperature /G70/G105/G103/G46/G32/G49/G57/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G83/G116/G111/G114/G101/G100/G32/G67/G104/G97/G114/G103/G101/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116/G70/G105/G103/G46/G32/G49/G56/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G67/G117/G114/G114/G101/G110/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 /G70/G105/G103/G46/G32/G50/G48/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G83/G116/G111/G114/G101/G100/G32/G67/G104/G97/G114/G103/G101/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 -75 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Temperature ( °C ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS(th), Gate threshold Voltage (V) ID = 150μA ID = 250μA ID = 1.0mA ID = 1.0A 100 200 300 400 500 600 700 dif/dt (A/μs) 100 150 200 250 300 350 400 450 Qrr (nC) IF = 58A VR = 85V TJ = 125°C 100 200 300 400 500 600 700 dif/dt (A/μs) 100 150 200 250 300 350 400 Qrr (nC) IF = 39A VR = 85V 100 200 300 400 500 600 700 dif/dt (A/μs) IRRM (A) IF = 58A VR = 85V 100 200 300 400 500 600 700 dif/dt (A/μs) IRRM (A) IF = 39A VR = 85V

/G32/G32/G32/G32/G32/G32/G32/G32/G55/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 22b. Unclamped Inductive WaveformsFig 22a. Unclamped Inductive Test Circuit Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform Fig 21. /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G32for N-Channel HEXFET/G174/G32Power MOSFETs /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115

  • /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G42 /G131 /G132/G130 /G82/G71 /G86/G68/G68• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
  • /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
  • /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
  • /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G129 /G73/G110/G100/G117/G99/G116/G111/G114/G32/G67/G117/G114/G114/G101/G110/G116 VCC DUT L S 20K Vds Vgs Id Vgs(th) Qgs1Qgs2QgdQgodr RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V tp V(BR)DSS IAS VGS VDD VDS LD D.U.T Second Pulse Width < 1μs Duty Factor < 0.1% VGS VDS 90% 10% td(on) td(off)tr tf

/G32/G32/G32/G32/G32/G32/G32/G32/G56/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 TO-220AB packages are not recommended for Surface Mount Application. /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G58/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 FB4410Z FB4410Z PYWW? LC LC PART NUMBER DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE OR YWWP LC LC PART NUMBER DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE

/G32/G32/G32/G32/G32/G32/G32/G32/G57/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G58/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101/G32(Dimensions are shown in millimeters (inches)) /G68/G50/G80/G97/G107/G32 /G80/G97/G114/G116/G32 /G77/G97/G114/G107/G105/G110/G103/G32 /G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 IRFS4410Z FS4410Z PYWW? YWWPASSEMBLY LOT CODE INTERNATIONAL RECTIFIER LOGO DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE LC LC PART NUMBER OR ASSEMBLY LOT CODE INTERNATIONAL RECTIFIER LOGO DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE LC LC PART NUMBER

/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 TO-262 Part Marking Information /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G58/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 FSL4410Z PYWW? FSL4410Z YWWPASSEMBLY LOT CODE INTERNATIONAL RECTIFIER LOGO DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE PART NUMBER OR DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE LC LC ASSEMBLY LOT CODE INTERNATIONAL RECTIFIER LOGO PART NUMBERLC LC

/G32/G32/G32/G32/G32/G32/G32/G32/G49/G49/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G58/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47

/G32/G32/G32/G32/G32/G32/G32/G32/G49/G50/G32/G32/G32/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G169/G32/G50/G48/G49/G52/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G83/G117/G98/G109/G105/G116/G32/G68/G97/G116/G97/G115/G104/G101/G101/G116/G32/G70/G101/G101/G100/G98/G97/G99/G107/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G65/G112/G114/G105/G108/G32/G50/G53/G44/G32/G50/G48/G49/G52 /G73/G82/G70/G66/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G52/G52/G49/G48/G90/G80/G98/G70/G47/G73/G82/G70/G83/G76/G52/G52/G49/G48/G90/G80/G98/G70 TO-220 N/A D2Pak TO-262 RoHS compliant Qualification information Industrial (per JEDEC JESD47F guidelines) Yes Qualification level Moisture Sensitivity Level MS L 1 /G134/G32/G32/G32/G32/G32/G81/G117/G97/G108/G105/G102/G105/G99/G97/G116/G105/G111/G110/G32/G115/G116/G97/G110/G100/G97/G114/G100/G115/G32/G99/G97/G110/G32/G98/G101/G32/G102/G111/G117/G110/G100/G32/G97/G116/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114/G146/G115/G32/G119/G101/G98/G32/G115/G105/G116/G101/G58/G32/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G114/G111/G100/G117/G99/G116/G45/G105/G110/G102/G111/G47/G114/G101/G108/G105/G97/G98/G105/G108/G105/G116/G121/G47 /G134/G134/G32/G32/G65/G112/G112/G108/G105/G99/G97/G98/G108/G101/G32/G118/G101/G114/G115/G105/G111/G110/G32/G111/G102/G32/G74/G69/G68/G69/G67/G32/G115/G116/G97/G110/G100/G97/G114/G100/G32/G97/G116/G32/G116/G104/G101/G32/G116/G105/G109/G101/G32/G111/G102/G32/G112/G114/G111/G100/G117/G99/G116/G32/G114/G101/G108/G101/G97/G115/G101/G46 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Revision History

  • Updated data sheet with new IR corporate template.
  • Updated package outline & part marking on page 8, 9 & 10.
  • Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. 4/25/2014