FB4110Q VBSEMI | Alldatasheet
Document overview
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Technical content
N-Channel 100 V (D-S) MOSFET
FEATURES
- T r e n ch F E T® Power MOSFET
- Package with Low Thermal Resistance
- AEC-Q101 Qualifiedd
- 1 0 0 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 100 0.003RDS(on) () at VGS = 10 V 0 ID (A) 180 Configuration Single D G S N-Channel MOSFET TO-220 Top View GD S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL UNLIMIT IT Drain-Source Voltage 10VDS 0 V Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current a ID 180 TC = 125 A °C 140 Continuous Source Current (Diode Conduction)a IS 180 Pulsed Drain Currentb IDM 480 Single Pulse Avalanche Current I L = 0.1 mH AS 73 Single Pulse Avalanche Energy EAS 266 mJ TC = 25 °C Maximum Power Dissipationb PD 250 W TC = 125 °C 83 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT PCB MountJunction-to-Ambient c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.6 FB4110Q-VB www.VBsemi.com Notes a. Base on Tc = 25°C. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. a g
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design , not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VGS = 0, IDVDS = 250 μA 100 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage VDS = 0 V, VGSIGSS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current VGS IDSS = 0 V VDS = 100 V - - 1 VGS = 0 V V DS = 100 V, TJ μA = 125 °C - - 50 VGS = 0 V V DS = 100 V, TJ = 175 °C - - 500 On-State Drain Currenta ID(on) VDSVGS = 10 V 5 V 120 - - A Drain-Source On-State Resistancea VGS RDS(on) = 10 V ID = 20 A - 0.0030 ID = 20 A, TJ = 12VGS = 10 V 5 °C - 0.0064 VGS = 10 V I D = 20 A, TJ = 175 °C - 0.0080 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A - 82 - S Dynamicb Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 5780 7230 pF Output Capacitance Coss - 3070 3840 Reverse Transfer Capacitance Crss - 305 385 Total Gate Chargec Qg VGS = 10 V V DS = 50 V, ID = 70 A - 125 190 Gate-Source Charge nC c Qgs -2 8- Gate-Drain Chargec Qgd -4 6- Gate Resistance Rg f = 1 MHz 1.6 3.3 5 Turn-On Delay Timec td(on) VDD = 50 V, RL = 0.7 ID 70 A, VGEN = 10 V, Rg = 1 6 2 5 Rise Time ns c tr - 110 165 Turn-Off Delay Timec td(off) -4 0 6 0 Fall Timec tf -1 2 2 0 Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM - - 480 A Forward Voltage IF = 100 A, VGS VSD = 0 - 0.9 1.5 V FB4110Q-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance Transfer Characteristics Gate Charge 100 150 200 0 2 4 6 8 ID - Drain Current (A) VGS VDS - Drain-to-Source Voltage (V) = 10 V thru 7 V VGS = 5 V VGS = 6 V 120 160 200 gfs - Transconductance (S 0 14 28 42 56 70 TC = - 55 ° TC = 125 ° ID - Drain Current (A) C C TC = 25 °C 2000 4000 6000 8000 10000 0 20 40 60 80 100 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 120 150 0 2 4 6 8 10 VGS - Gate-to-S ID - Drain Current (A) ource Voltage (V) TC = 25° TC = 125° TC = - 55°C C C 0.000 0.002 0.004 0.006 0.008 0.010 RDS(on) - On-Resis tance (Ω) VGS = 10 V VGS - Gate-to-S ource Voltage (V) 60 90 120 150 Qg - Total Gate Charge (nC) ID = 70 A VDS = 50 V FB4110Q-VB www.VBsemi.com g R¡pí~¿ÿ400-655-8788ID - Drain Current (A) RDS(on) vs. Drain Current 140 180 200170160150
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source Drain Diod On-Resistance vs. Gate-to-Source Voltage e Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 2.1 1.8 1.5 1.2 0.9 0.6 - 50 - 25 RDS(on) - On-Resist 0 25 50 75 100 125 150 175 ance (Normalized) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature ID = 20 A VGS = 10 V 0.020 0.016 0.012 0.008 0.004 0.000 RDS(on) - On-Resistance (Ω 0 2 4 6 8 10 TJ = 150 ° VGS - Gate-to-Source Voltage (V) C TJ = 25 °C 100 0.1 0.01 0.001 TJ = 150 ° TJ = 25 ° VSD - Source-to-Drain IS - Source Current (A) Voltage (V) C C 0.6 0.1 - 0.4 - 0.9 - 1.4 - 1.9 VGS(th) Variance (V) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) ID = 250 μA ID = 5 mA VDS - Drain-to-Source Voltage 125 120 115 110 105 100 (V) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID = 10 mA FB4110Q-VB www.VBsemi.com g
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s ID - Drain Current (A) pecified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 100 ms, 1 s, 10 s, DC ID Limited 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Normalized Effective Trans Square Wave Pulse Duration (s) ient Thermal Impedance FB4110Q-VB www.VBsemi.com g
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 0.1 0.01 10-5 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 Normalized Effectiv e Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 FB4110Q-VB www.VBsemi.com g
- M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C INCHE MILLIMETERS S A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 FB4110Q-VB www.VBsemi.com g
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