FB20R06KL4

FB20R06KL4 EUPEC | Alldatasheet

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Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Tvj =25°C V RRM 800 V Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip TC =80°C I FRMSM 58 A Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC =80°C I RMSmax 96 A Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C I FSM 448 A surge forward current tP = 10 ms, Tvj = 150°C 358 A Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t 1000 A2s I2t - value tP = 10 ms, Tvj = 150°C 642 A2s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Tvj =25°C V CES 600 V Kollektor-Dauergleichstrom TC = 65°C I C,nom. 20 A DC-collector current TC = 25 °C I C 25 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC =65°C I CRM 40 A Gesamt-Verlustleistung total power dissipation TC = 25°C P tot 80 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES +/- 20V V Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current IF 20 A Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms I FRM 40 A Grenzlastintegral I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t 62 A2s prepared by: Thomas Passe date of publication: 2002-02-27 approved by: Ingo Graf revision: 5 1(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier min. typ. max. Durchlaßspannung forward voltage Tvj = 150°C, I F = 20 A VF - 0,85 - V Schleusenspannung threshold voltage Tvj = 150°C V (TO) - 0,63 - V Ersatzwiderstand slope resistance Tvj = 150°C r T -1 0- m /g87 Sperrstrom reverse current Tvj = 150°C, V R = 800 V IR -5- m A Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C R AA'+CC' - 4 - m /g87 Transistor Wechselrichter/ Transistor Inverter min. typ. max. Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 20 A VCE sat - 1,95 2,55 V collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 20 A - 2,2 - V Gate-Schwellenspannung gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,5mA VGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Cies - 1,1 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C I GES - - 400 nA Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 47 Ohm td,on -2 2-n s VGE = ±15V, Tvj = 125°C, RG = 47 Ohm - 31 - ns Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 47 Ohm tr -2 3-n s VGE = ±15V, Tvj = 125°C, RG = 47 Ohm - 37 - ns Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 47 Ohm td,off - 143 - ns VGE = ±15V, Tvj = 125°C, RG = 47 Ohm - 154 - ns Fallzeit (induktive Last) IC = INenn, V CC = 300 V fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 47 Ohm tf -2 2-n s VGE = ±15V, Tvj = 125°C, RG = 47 Ohm - 38 - ns Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 47 Ohm Eon - 0,73 - mWs L S = 80 nH Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 47 Ohm Eoff - 0,56 - mWs L S = 80 nH Kurzschlußverhalten tP /g163 10µs, VGE /g163 15V, RG = 47 Ohm SC Data Tvj/g163125°C, V CC = 360 V ISC -8 0- A -m AICES - 5,0VGE = 0V, Tvj = 125°C, VCE = 600V 2(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Modulinduktivität stray inductance module L/g115CE - - 40 nH Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C R CC'+EE' - 13 - m /g87 Diode Wechselrichter/ Diode Inverter min. typ. max. Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 20 A VF - 1,7 2,15 V forward voltage VGE = 0V, Tvj = 125°C, IF = 20 A - 1,7 - V Rückstromspitze IF=INenn, - di F/dt = 1000 A/us peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 300 V IRM -2 0- A VGE = -10V, Tvj = 125°C, VR = 300 V - 23 - A Sperrverzögerungsladung IF=INenn, - di F/dt = 1000 A/us recovered charge VGE = -10V, Tvj = 25°C, VR = 300 V Qr - 1 - µAs VGE = -10V, Tvj = 125°C, VR = 300 V - 1,7 - µAs Abschaltenergie pro Puls IF=INenn, - di F/dt = 1000 A/us reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 300 V Erec - 0,2 - mWs VGE = -10V, Tvj = 125°C, VR = 300 V - 0,35 - mWs NTC-Widerstand/ NTC-Thermistor min. typ. max. Nennwiderstand TC = 25°C R 25 -5- k /g87 Abweichung von R100 deviation of R100 TC = 100°C, R100 = 493 /g87 /g68R/R -5 5 % Verlustleistung power dissipation TC = 25°C P 25 20 mW B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] B 25/50 3375 K 3(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode /g108Paste=1W/m*K RthJH - 1,1 - K/W thermal resistance, junction to heatsink Trans. Wechsr./ Trans. Inverter /g108grease=1W/m*K - 1,8 - K/W Diode Wechsr./ Diode Inverter - 3,7 - K/W Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 1,6 K/W Diode Wechsr./ Diode Inverter - - 2,7 K/W Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode /g108Paste=1W/m*K RthCH - 0,2 - K/W thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter /g108grease=1W/m*K - 0,4 - K/W Diode Wechsr./ Diode Inverter - 1,3 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Anpreßkraft f. mech. Befestigung pro Feder F N mounting force per clamp Gewicht weight G3 6g Kriechstrecke creeping distance 13,5 mm Luftstrecke clearance 12 mm Kriechstrecke creeping distance 7,5 mm Luftstrecke clearance 7,5 mm Kontakt - Kühlkörper terminal to heatsink Terminal - Terminal terminal to terminal 40...80 4(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IC [A] VCE [V] IC [A] VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 Tj = 25°C Tj = 125°C 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VGE = 8V VGE = 9V VGE = 10V Vge=12V Vge=15V Vge=20V Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) Tvj = 125°C 5(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IC [A] VGE [V] IF [A] VF [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF) Forward characteristic of FWD Inverter (typical) 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 Tj = 25°C Tj = 125°C Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V 0,00 0,50 1,00 1,50 2,00 2,50 3,00 Tj = 25°C Tj = 125°C 6(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary 300 V

47 Ohm

E [mWs] IC [A] 300 V E [mWs] RG [/g87] Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff = 0,5 1,5 2,5 40 50 60 70 80 90 100 110 120 Eon Eoff Erec Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC = 0,5 1,5 2,5 0 5 10 15 20 25 30 35 40 45 Eon Eoff Erec 7(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary ZthJH [K/W] t [s] IC [A] VCE [V] Transienter Wärmewiderstand Wechselr. ZthJH = f (t) Transient thermal impedance Inverter 0,100 1,000 10,000 0,001 0,01 0,1 1 10 Zth-IGBT Zth-FWD i 1 2 3 4 IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 624,52e-3 /g116i [s]: 3e-6 79,74e-3 10,28e-3 226,61e-3 Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG = 0 100 200 300 400 500 600 700 IC,Modul IC,Chip 8(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IF [A] VF [V] R[/g87] TC [°C] Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF) Forward characteristic of Rectifier Diode (typical) 0,00 0,20 0,40 0,60 0,80 1,00 1,20 Tj = 25°C Tj = 150°C NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) Rtyp 100 1000 10000 100000 0 20 40 60 80 100 120 140 9(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Schaltplan/ Circuit diagram Gehäuseabmessungen/ Package outlines /g74 Bohrplan / drilling layout 10(11)

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Gehäuseabmessungen Forts. / Package outlines contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11)

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