FB180SA10 IRF | Alldatasheet

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Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current  720 PD @T C = 25°C Power Dissipation 480 W Linear Derating Factor 2.7 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy‚ 700 mJ IAR Avalanche Current 180 A EAR Repetitive Avalanche Energy 48 mJ dv/dt Peak Diode Recovery dv/dt ƒ 5.7 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range VISO Insulation Withstand Voltage (AC-RMS) 2.5 kV Mounting torque, M4 srew 1.3 N•m FB180SA10 HEXFET ® Power MOSFET PD- 91651C S D G VDSS = 100V R DS(on) = 0.0065W ID = 180A Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT- 227 package contribute to its universal acceptance throughout the industry. 2/1/99

Description

l Easy to Use and Parallel l Very Low On-Resistance l Dynamic dv/dt Rating l Fully Avalanche Rated l Simple Drive Requirements l Low Drain to Case Capacitance l Low Internal Inductance SOT-227 Absolute Maximum Ratings Parameter Typ. Max. Units RqJC Junction-to-Case ––– 0.26 R qCS Case-to-Sink, Flat, Greased Surface 0.05 ––– °C/W Thermal Resistance 1 www.irf.com

2 www.irf.com  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒISD £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS , TJ £ 150°C Notes: ‚ Starting TJ = 25°C, L =43µH RG = 25W, IAS = 180A. (See Figure 12) „ Pulse width £ 300µs; duty cycle £ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. V SD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 180A, VGS = 0V „ trr Reverse Recovery Time ––– 300 450 ns T J = 25°C, IF = 180A Q rr Reverse Recovery Charge ––– 2.6 3.9 µC di/dt = 100A/µs „ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD ) Source-Drain Ratings and Characteristics A 180 720 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, ID = 250µA DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.093 –––V/°C Reference to 25°C, ID = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– –––0.0065 W VGS = 10V, ID = 108A „ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 93 ––– ––– S V DS = 25V, ID = 108A ––– ––– 50 µA VDS = 100V, VGS = 0V ––– ––– 500 V DS = 80V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Q g Total Gate Charge ––– 250 380 I D = 180A Q gs Gate-to-Source Charge ––– 40 60 nC V DS = 80V Q gd Gate-to-Drain ("Miller") Charge ––– 110 165 V GS = 10.0V, See Fig. 6 and 13 „ td(on) Turn-On Delay Time ––– 45 ––– V DD = 50V tr Rise Time ––– 351 ––– I D = 180A td(off) Turn-Off Delay Time ––– 181 ––– R G = 2.0W (Internal) tf Fall Time ––– 335 ––– R D = 0.27W, See Fig. 10 „ Ls Internal Source Inductance ––– 5.0 ––– nH Between lead, and center of die contact C iss Input Capacitance ––– 10700 ––– V GS = 0V Coss Output Capacitance ––– 2800 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 1300 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current

www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 150CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 4 5 6 7 8 9 10 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 180A

4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 150 CJ ° T = 25 CJ ° 1 10 100 5000 10000 15000 20000 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd C iss C oss C rss 0 50 100 150 200 250 300 350 400 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 180 A V = 20VDS V = 50VDS V = 80VDS 100 1000 10000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms

www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width £ 1 µs Duty Factor £ 0.1 % R D VGS R G D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 100 125 150 175 200 T , Case Temperature( C) I , Drain Current (A) D 0.001 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0.01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V 25 50 75 100 125 150 300 600 900 1200 1500 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 71A 100A 160A

www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD

  • dv/dt controlled by RG
  • Driver same type as D.U.T.
  • ISD controlled by Duty Factor "D"
  • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
  • Low Stray Inductance
  • Ground Plane
  • Low Leakage Inductance Current Transformer

8 www.irf.com Tube 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 )4X 15.00 ( .590 ) R FULL 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -C- 0.25 ( .010 ) M C A M B M 25.70 ( 1.012 ) 25.20 ( .992 ) -B- 6.25 ( .246 ) CHAM FER 2.00 ( .079 ) X 457 -A- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) LEAD ASSIGMENTS IGBT E C GE S D GS HEXFET A1 K2 K1 A2 HEXFRED QUANTITY PER TUBE IS 10 M4 SREW AND WASHE R INCLUDED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99