IRFB11N50A IRF | Alldatasheet
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Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A IDM Pulsed Drain Current 44 PD @T C = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) 3/30/99 PD- 91809B TO -220AB SMPS MOSFET HEXFET ® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits
Applications
l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS Rds(on) max I D 500V 0.52 Ω 11A Applicable Off Line SMPS Topologies: l Two Transistor Forward l Half & Full Bridge IRFB11N50A www.irf.com 1 GS D Notes through are on page 8 l Power Factor Correction Boost Absolute Maximum Ratings
2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 6.1 ––– ––– S V DS = 50V, ID = 6.6A Q g Total Gate Charge ––– ––– 52 I D = 11A Q gs Gate-to-Source Charge ––– ––– 13 nC V DS = 400V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 18 V GS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– V DD = 250V tr Rise Time ––– 35 ––– I D = 11A td(off) Turn-Off Delay Time ––– 32 ––– R G = 9.1Ω tf Fall Time ––– 28 ––– R D = 22Ω ,See Fig. 10 C iss Input Capacitance ––– 1423 ––– V GS = 0V C oss Output Capacitance ––– 208 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 8.1 ––– pF ƒ = 1.0MHz, See Fig. 5 C oss Output Capacitance ––– 2000 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 55 ––– V GS = 0V, VDS = 400V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 97 ––– V GS = 0V, VDS = 0V to 400V Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V V GS = 0V, ID = 250µA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.52 Ω VGS = 10V, ID = 6.6A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS , ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– 100 V GS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ T J = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 275 mJ IAR Avalanche Current ––– 11 A EAR Repetitive Avalanche Energy ––– 17 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V T J = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 510 770 ns T J = 25°C, IF = 11A Q rr Reverse RecoveryCharge ––– 3.4 5.1 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics A Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.75 R θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R θJA Junction-to-Ambient ––– 62 Thermal Resistance
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1 10 100 20µs PULSE WIDTH T = 150CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 11A 0.1 100 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 150 CJ ° T = 25 CJ °
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 10 20 30 40 50 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 6.6A V = 100VDS V = 250VDS V = 400VDS 0.1 100 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 400 800 1200 1600 2000 2400 1 10 100 1000 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V ) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 11A 0.1 100 1000 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms
www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 T , Case Temperature( C) I , Drain Current (A) D 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)
6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0. 01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 580 600 620 640 660 A DSav avI , Avalanche Current (A ) V , Avalanche Voltage (V) 25 50 75 100 125 150 100 200 300 400 500 600 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 4.9A 7.0A 11A
www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD
- dv/dt controlled by RG
- Driver same type as D.U.T.
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer
8 www.irf.com LEAD ASSI GNMENTS 1 - G ATE 2 - D RA IN 3 - S OU RC E 4 - D RA IN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (. 185) 4.20 (. 165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 D IMEN SION IN G & TOLE R AN CING P E R A NS I Y 14.5M, 1982. 3 OU TLINE CO NF OR MS T O JEDE C OUT LINE T O-220AB . 2 C ON TR OLLING DIME NS IO N : INC H 4 H EA TS IN K & LE AD ME AS UR EM EN TS D O NOT I NCLUDE BURRS. Part Marking Information TO-220AB Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) PART NUMBERINTERNATIONAL RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 W ITH ASSEMBLY LOT CODE 9B1M ASSEMBLY LOT CODE DATE CODE (YYWW ) YY = YEAR W W = W EEK 9246 IRF1010 9B 1M A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice 3/99 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 11A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 4.5mH RG = 25Ω , IAS = 11A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS