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Technical content

Features

 Floating Channel for Bootstrap Operation to +600V  4A/4A Sourcing/Sinking Current Driving Capability  Common-Mode dv/dt Noise Canceling Circuit  3.3V and 5V Input Logic Compatible  Output In-phase with Input Signal  Under- Voltage Lockout for VBS  25V Shunt Regulator on VDD and VBS  8-Lead Small Outline Package (SOP)  Qualified to AEC Q100

Applications

 High-Speed Gate Driver  High-Power Buck Converter  Motor Drive Inverter

Description

The FAN7171_F085 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circum- stances. An advanced level-sh ift circuit offers high-side gate driver operation up to V S=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when V BS is lower than the specified threshold voltage. The high-current and low-output voltage drop feature makes this device suitable for sustaine switch driver and energy recovery switch driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications.

Ordering Information

Note: 1. These devices passed wave soldering test by JESD22A-111. For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. 8-SOP Part Number Package Operating Temperature Range Eco Status Packing Method FAN7171M(1) 8-SOP -40°C ~ 125°C RoHS Tube FAN7171MX(1) Tape & Reel

Figure 1. Application Circuit for Step-Down (Buck) DC-DC Converter Figure 2. Functional Block Diagram

2 NOISE

Pins 3 and 5 are no connection.

Figure 3. Pin Assignments(Top View)

2 IN Logic Input for High-Side Gate Driver Output

3 NC No Connection

4 GND Ground

5 NC No Connection

7 HO High-Side Driver Output

FAN7171_F085 — High-Current High-Side Gate Drive IC © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN7171_F085 Rev. 1.0.0 4 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. -40°C<=TA <=125°C unless otherwise specified. Notes: 1) This IC contains a shunt regulator on VDD and VBS with a normal break down voltage of 25V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section 2) Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3) Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.

4 Do not exceed power dissipation (P

D) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual dev ice operation. Recommended operating conditions are specified to ensure optimal perfor mance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Characteristics Min. Max. Unit VS High-Side Floating Offset Voltage V B-VSHUNT VB+0.3 V VB High-Side Floating Supply Voltage(2) -0.3 625.0 V VHO High-Side Floating Output Voltage V S-0.3 V B+0.3 V VDD Low-Side and Logic Supply Voltage(2) -0.3 V SHUNT V VIN Logic Input Voltage -0.3 V DD+0.3 V dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(3, 4, 5) 0.625 W JA Thermal Resistance 200 C/W TJ Junction Temperature -55 150 C TSTG Storage Temperature -55 150 C TA Operating Ambient Temperature -40 125 C VESD Human Body Model(HBM) 1500 V VCDM Charge Device Model 500 V Symbol Parameter Min. Max. Unit VBS High-Side Floating Supply Voltage V S+10 V S+20 V VS High-Side Floating Supply Offset Voltage(DC) 6-V DD 600 V VS High-Side Floating Supply Offset Voltage(Transient) -15(~170) -7(~400) 600 V VHO High-Side Output Voltage V S VB V VIN Logic Input Voltage GND V DD V VDD Supply Voltage 10 20 V

FAN7171_F085 — High-Current High-Side Gate Drive IC © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN7171_F085 Rev. 1.0.0 5

Electrical Characteristics

VBIAS(VDD, VBS)=15.0V, -40°C<=TA <= 125°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Note: 5 These parameters guaranteed by design. Dynamic Electrical Characteristics VBIAS(VDD,VBS)=15V, VS=GND=0V, CL=1000pF, and-40°C<= TA <=125°C, unless otherwise specified. Symbol Characteristics Test Condition Min. Typ. Max. Unit POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current V IN=0V or 5V 25 70 A IPDD Operating VDD Supply Current f IN=20KHz, No Load 35 100 A BOOTSTRAPPED SUPPLY SECTION VBSUV+ VBS Supply Under-Voltage Positive Going Threshold Voltage VBS=Sweep 8.2 9.2 10.2 V VBSUV- VBS Supply Under-Voltage Negative Going Threshold Voltage VBS=Sweep 7.5 8.5 9.5 V VBSHYS VBS Supply Under-Voltage Lockout Hysteresis Voltage VBS=Sweep 0.6 V ILK Offset Supply Leakage Current VB=VS=600V 50 A IQBS Quiescent VBS Supply Current V IN=0V or 5V 60 120 A IPBS Operating VBS Supply Current CLOAD=1nF, fIN=20KHz, rms value 0.73 2.8 mA SHUNT REGULATOR SECTION VSHUNT VDD and VBS Shunt Regulator Clamping Voltage ISHUNT=5mA 23 25 V INPUT LOGIC SECTION(IN) VIH Logic “1” Input Voltage 2.5 V VIL Logic “0” Input Voltage 0.8 V IIN+ Logic Input High Bias Current VIN=5V 45 125 A IIN- Logic Input Low Bias Current VIN=0V 2 A RIN Input Pull-down Resistance 40 110 K  GATE DRIVER OUTPUT SECTION(HO) VOH High Level Output Voltage (VBIAS - VO) No Load 1.5 V VOL Low Level Output Voltage No Load 35 mV IO+ Output High, Short-Circuit Pulsed Current(5) VHO=0V, VIN=5V, PW 10µs 3.0 4.0 A IO- Output Low, Short-Circuit Pulsed Current(5) VHO=15V,VIN=0V, PW 10µs 3.0 4.0 A VS Allowable Negative VS pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-on Propagation Delay Time V S=0V 150 210 ns toff Turn-off Propagation Delay Time V S=0V 150 210 ns tr Turn-on Rise Time 25 50 ns tf Turn-off Fall Time 15 45 ns

Figure 24. 8-Lead Small Outline Package (SOP) specifically the warranty therein, which covers Fairchild products. B) ALL DIMENSIONS ARE IN MILLIMETERS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M.

1.75 MAX

FAN7171_F085 — High-Current High-Side Gate Drive IC © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN7171_F085 Rev. 1.0.0 11